| The influence of growth temperature on 4H-SiC epilayers grown on different off-angle (0001) Si-face substrates | |
| G.G. Yan ; X.F. Liu ; Z.W. Shen ; W.S. Zhao ; L. Wang ; Y.X. Cui ; J.T. Li ; F. Zhang ; G.S. Sun ; Y.P. Zeng | |
| 2019 | |
| Source Publication | Journal of Crystal Growth
 |
| Volume | 507Pages:175-179 |
| Indexed By | SCI |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/29560 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | G.G. Yan ; X.F. Liu ; Z.W. Shen ; W.S. Zhao ; L. Wang ; Y.X. Cui ; J.T. Li ; F. Zhang ; G.S. Sun ; Y.P. Zeng. The influence of growth temperature on 4H-SiC epilayers grown on different off-angle (0001) Si-face substrates[J]. Journal of Crystal Growth,2019,507:175-179. |
| APA | G.G. Yan ; X.F. Liu ; Z.W. Shen ; W.S. Zhao ; L. Wang ; Y.X. Cui ; J.T. Li ; F. Zhang ; G.S. Sun ; Y.P. Zeng.(2019).The influence of growth temperature on 4H-SiC epilayers grown on different off-angle (0001) Si-face substrates.Journal of Crystal Growth,507,175-179. |
| MLA | G.G. Yan ; X.F. Liu ; Z.W. Shen ; W.S. Zhao ; L. Wang ; Y.X. Cui ; J.T. Li ; F. Zhang ; G.S. Sun ; Y.P. Zeng."The influence of growth temperature on 4H-SiC epilayers grown on different off-angle (0001) Si-face substrates".Journal of Crystal Growth 507(2019):175-179. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| The influence of gro（1446KB） | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text | |
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