SEMI OpenIR  > 中科院半导体材料科学重点实验室
The influence of growth temperature on 4H-SiC epilayers grown on different off-angle (0001) Si-face substrates
G.G. Yan ;   X.F. Liu ;   Z.W. Shen ;   W.S. Zhao ;   L. Wang ;   Y.X. Cui ;   J.T. Li ;   F. Zhang ;   G.S. Sun ;   Y.P. Zeng
2019
Source PublicationJournal of Crystal Growth
Volume507Pages:175-179
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29560
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
G.G. Yan ; X.F. Liu ; Z.W. Shen ; W.S. Zhao ; L. Wang ; Y.X. Cui ; J.T. Li ; F. Zhang ; G.S. Sun ; Y.P. Zeng. The influence of growth temperature on 4H-SiC epilayers grown on different off-angle (0001) Si-face substrates[J]. Journal of Crystal Growth,2019,507:175-179.
APA G.G. Yan ; X.F. Liu ; Z.W. Shen ; W.S. Zhao ; L. Wang ; Y.X. Cui ; J.T. Li ; F. Zhang ; G.S. Sun ; Y.P. Zeng.(2019).The influence of growth temperature on 4H-SiC epilayers grown on different off-angle (0001) Si-face substrates.Journal of Crystal Growth,507,175-179.
MLA G.G. Yan ; X.F. Liu ; Z.W. Shen ; W.S. Zhao ; L. Wang ; Y.X. Cui ; J.T. Li ; F. Zhang ; G.S. Sun ; Y.P. Zeng."The influence of growth temperature on 4H-SiC epilayers grown on different off-angle (0001) Si-face substrates".Journal of Crystal Growth 507(2019):175-179.
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