SEMI OpenIR  > 中科院半导体材料科学重点实验室
Homoepitaxial growth of multiple 4H-SiC wafers assembled in a simple holder via conventional chemical vapor deposition
X.F. Liu ;   G.G. Yan ;   Z.W. Shen ;   Z.X. Wen ;   J. Chen ;   Y.W. He ;   W.S. Zhao ;   L. Wang ;   M. Guan ;   F. Zhang ;   G.S. Sun ;   Y.P. Zeng
2019
Source PublicationJournal of Crystal Growth
Volume507Pages:283-287
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29559
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
X.F. Liu ; G.G. Yan ; Z.W. Shen ; Z.X. Wen ; J. Chen ; Y.W. He ; W.S. Zhao ; L. Wang ; M. Guan ; F. Zhang ; G.S. Sun ; Y.P. Zeng ;. Homoepitaxial growth of multiple 4H-SiC wafers assembled in a simple holder via conventional chemical vapor deposition[J]. Journal of Crystal Growth,2019,507:283-287.
APA X.F. Liu ; G.G. Yan ; Z.W. Shen ; Z.X. Wen ; J. Chen ; Y.W. He ; W.S. Zhao ; L. Wang ; M. Guan ; F. Zhang ; G.S. Sun ; Y.P. Zeng ;.(2019).Homoepitaxial growth of multiple 4H-SiC wafers assembled in a simple holder via conventional chemical vapor deposition.Journal of Crystal Growth,507,283-287.
MLA X.F. Liu ; G.G. Yan ; Z.W. Shen ; Z.X. Wen ; J. Chen ; Y.W. He ; W.S. Zhao ; L. Wang ; M. Guan ; F. Zhang ; G.S. Sun ; Y.P. Zeng ;."Homoepitaxial growth of multiple 4H-SiC wafers assembled in a simple holder via conventional chemical vapor deposition".Journal of Crystal Growth 507(2019):283-287.
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