SEMI OpenIR  > 半导体超晶格国家重点实验室
Semiconductor–metal transition in GaAs nanowires under high pressure
Yi-Lan Liang;  Zhen Yao;  Xue-Tong Yin;  Peng Wang;  Li-Xia Li;  Dong Pan;  Hai-Yan Li;  Quan-Jun Li;  Bing-Bing Liu and Jian-Hua Zhao
2019
Source PublicationChinese Physics B
Volume28Issue:7Pages:076401
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29548
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Yi-Lan Liang;Zhen Yao;Xue-Tong Yin;Peng Wang;Li-Xia Li;Dong Pan;Hai-Yan Li;Quan-Jun Li;Bing-Bing Liu and Jian-Hua Zhao. Semiconductor–metal transition in GaAs nanowires under high pressure[J]. Chinese Physics B,2019,28(7):076401.
APA Yi-Lan Liang;Zhen Yao;Xue-Tong Yin;Peng Wang;Li-Xia Li;Dong Pan;Hai-Yan Li;Quan-Jun Li;Bing-Bing Liu and Jian-Hua Zhao.(2019).Semiconductor–metal transition in GaAs nanowires under high pressure.Chinese Physics B,28(7),076401.
MLA Yi-Lan Liang;Zhen Yao;Xue-Tong Yin;Peng Wang;Li-Xia Li;Dong Pan;Hai-Yan Li;Quan-Jun Li;Bing-Bing Liu and Jian-Hua Zhao."Semiconductor–metal transition in GaAs nanowires under high pressure".Chinese Physics B 28.7(2019):076401.
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