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Physical mechanism for the synapse behaviour of WTiO x -based memristors
Hengjie Zhang;   Chuantong Cheng;   Huan Zhang;   Run Chen;   Beiju Huang;   Hongda Chen ;   Weihua Pei
2019
Source PublicationPhysical Chemistry Chemical Physics
Volume21Issue:42Pages:23758-23763
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29545
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Hengjie Zhang; Chuantong Cheng; Huan Zhang; Run Chen; Beiju Huang; Hongda Chen ; Weihua Pei. Physical mechanism for the synapse behaviour of WTiO x -based memristors[J]. Physical Chemistry Chemical Physics,2019,21(42):23758-23763.
APA Hengjie Zhang; Chuantong Cheng; Huan Zhang; Run Chen; Beiju Huang; Hongda Chen ; Weihua Pei.(2019).Physical mechanism for the synapse behaviour of WTiO x -based memristors.Physical Chemistry Chemical Physics,21(42),23758-23763.
MLA Hengjie Zhang; Chuantong Cheng; Huan Zhang; Run Chen; Beiju Huang; Hongda Chen ; Weihua Pei."Physical mechanism for the synapse behaviour of WTiO x -based memristors".Physical Chemistry Chemical Physics 21.42(2019):23758-23763.
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