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High performance silicon-based GeSn p–i–n photodetectors for short-wave infrared application
Yue Zhao;  Nan Wang;  Kai Yu;  Xiaoming Zhang;  Xiuli Li;  Jun Zheng;  Chunlai Xue;  Buwen Cheng ;   Chuanbo Li
2019
Source PublicationChinese Physics B
Volume28Issue:12Pages:128501
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29537
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Yue Zhao;Nan Wang;Kai Yu;Xiaoming Zhang;Xiuli Li;Jun Zheng;Chunlai Xue;Buwen Cheng ; Chuanbo Li. High performance silicon-based GeSn p–i–n photodetectors for short-wave infrared application[J]. Chinese Physics B,2019,28(12):128501.
APA Yue Zhao;Nan Wang;Kai Yu;Xiaoming Zhang;Xiuli Li;Jun Zheng;Chunlai Xue;Buwen Cheng ; Chuanbo Li.(2019).High performance silicon-based GeSn p–i–n photodetectors for short-wave infrared application.Chinese Physics B,28(12),128501.
MLA Yue Zhao;Nan Wang;Kai Yu;Xiaoming Zhang;Xiuli Li;Jun Zheng;Chunlai Xue;Buwen Cheng ; Chuanbo Li."High performance silicon-based GeSn p–i–n photodetectors for short-wave infrared application".Chinese Physics B 28.12(2019):128501.
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