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Enhancing the performance of GaN based LDs by using low In content InGaN instead of GaN as lower waveguide layer
J. Yang ;   D.G. Zhao ;  D.S. Jiang ;   P. Chen ;   J.J. Zhu ;   Z.S. Liu ;   F. Liang ;   W. Liu ;   S.T. Liu ;   M. Li
2019
Source PublicationOptics and Laser Technology
Volume111Pages:810-813
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29524
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
J. Yang ; D.G. Zhao ;D.S. Jiang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; F. Liang ; W. Liu ; S.T. Liu ; M. Li. Enhancing the performance of GaN based LDs by using low In content InGaN instead of GaN as lower waveguide layer[J]. Optics and Laser Technology,2019,111:810-813.
APA J. Yang ; D.G. Zhao ;D.S. Jiang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; F. Liang ; W. Liu ; S.T. Liu ; M. Li.(2019).Enhancing the performance of GaN based LDs by using low In content InGaN instead of GaN as lower waveguide layer.Optics and Laser Technology,111,810-813.
MLA J. Yang ; D.G. Zhao ;D.S. Jiang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; F. Liang ; W. Liu ; S.T. Liu ; M. Li."Enhancing the performance of GaN based LDs by using low In content InGaN instead of GaN as lower waveguide layer".Optics and Laser Technology 111(2019):810-813.
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