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Effect of Mg doping concentration of electron blocking layer on the performance of GaN‑based laser diodes
J. Yang ;   D. G. Zhao ;   J. J. Zhu ;   Z. S. Liu ;   D. S. Jiang ;   P. Chen ;   F. Liang ;   S. T. Liu ;   Y. Xing
2019
Source PublicationApplied Physics B
Volume125Pages:235
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29523
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
J. Yang ; D. G. Zhao ; J. J. Zhu ; Z. S. Liu ; D. S. Jiang ; P. Chen ; F. Liang ; S. T. Liu ; Y. Xing. Effect of Mg doping concentration of electron blocking layer on the performance of GaN‑based laser diodes[J]. Applied Physics B,2019,125:235.
APA J. Yang ; D. G. Zhao ; J. J. Zhu ; Z. S. Liu ; D. S. Jiang ; P. Chen ; F. Liang ; S. T. Liu ; Y. Xing.(2019).Effect of Mg doping concentration of electron blocking layer on the performance of GaN‑based laser diodes.Applied Physics B,125,235.
MLA J. Yang ; D. G. Zhao ; J. J. Zhu ; Z. S. Liu ; D. S. Jiang ; P. Chen ; F. Liang ; S. T. Liu ; Y. Xing."Effect of Mg doping concentration of electron blocking layer on the performance of GaN‑based laser diodes".Applied Physics B 125(2019):235.
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