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The self-compensation effect of heavily Mg doped p-GaN films studied by SIMS and photoluminescence
H.R. Qi ;   S. Zhang ;   S.T. Liu ;   F. Liang ;   L.K. Yi ;   J.L. Huang ;   M. Zhou ;   Z.W. He ;   D.G. Zhao ;   D.S. Jiang
2019
Source PublicationSuperlattices and Microstructures
Volume133Pages:106177
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29522
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
H.R. Qi ; S. Zhang ; S.T. Liu ; F. Liang ; L.K. Yi ; J.L. Huang ; M. Zhou ; Z.W. He ; D.G. Zhao ; D.S. Jiang. The self-compensation effect of heavily Mg doped p-GaN films studied by SIMS and photoluminescence[J]. Superlattices and Microstructures,2019,133:106177.
APA H.R. Qi ; S. Zhang ; S.T. Liu ; F. Liang ; L.K. Yi ; J.L. Huang ; M. Zhou ; Z.W. He ; D.G. Zhao ; D.S. Jiang.(2019).The self-compensation effect of heavily Mg doped p-GaN films studied by SIMS and photoluminescence.Superlattices and Microstructures,133,106177.
MLA H.R. Qi ; S. Zhang ; S.T. Liu ; F. Liang ; L.K. Yi ; J.L. Huang ; M. Zhou ; Z.W. He ; D.G. Zhao ; D.S. Jiang."The self-compensation effect of heavily Mg doped p-GaN films studied by SIMS and photoluminescence".Superlattices and Microstructures 133(2019):106177.
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