| Influence of small indium content in quantum barriers on the luminescence properties of InGaN/InGaN double-quantum wells | |
| FENG LIANG ; DEGANG ZHAO ; DESHENG JIANG ; ZONGSHUN LIU ; JIANJUN ZHU ; PING CHEN ; JING YANG ; LIQUN ZHANG | |
| 2019 | |
| Source Publication | Optical Materials Express
 |
| Volume | 9Issue:10Pages:3941-3951 |
| Indexed By | SCI |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/29521 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | FENG LIANG ; DEGANG ZHAO ; DESHENG JIANG ; ZONGSHUN LIU ; JIANJUN ZHU ; PING CHEN ; JING YANG ; LIQUN ZHANG. Influence of small indium content in quantum barriers on the luminescence properties of InGaN/InGaN double-quantum wells[J]. Optical Materials Express,2019,9(10):3941-3951. |
| APA | FENG LIANG ; DEGANG ZHAO ; DESHENG JIANG ; ZONGSHUN LIU ; JIANJUN ZHU ; PING CHEN ; JING YANG ; LIQUN ZHANG.(2019).Influence of small indium content in quantum barriers on the luminescence properties of InGaN/InGaN double-quantum wells.Optical Materials Express,9(10),3941-3951. |
| MLA | FENG LIANG ; DEGANG ZHAO ; DESHENG JIANG ; ZONGSHUN LIU ; JIANJUN ZHU ; PING CHEN ; JING YANG ; LIQUN ZHANG."Influence of small indium content in quantum barriers on the luminescence properties of InGaN/InGaN double-quantum wells".Optical Materials Express 9.10(2019):3941-3951. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Influence of small i（3941KB） | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text | |
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