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Influence of small indium content in quantum barriers on the luminescence properties of InGaN/InGaN double-quantum wells
FENG LIANG ;   DEGANG ZHAO ;   DESHENG JIANG ;   ZONGSHUN LIU ;   JIANJUN ZHU ;   PING CHEN ;   JING YANG ;   LIQUN ZHANG
2019
Source PublicationOptical Materials Express
Volume9Issue:10Pages:3941-3951
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29521
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
FENG LIANG ; DEGANG ZHAO ; DESHENG JIANG ; ZONGSHUN LIU ; JIANJUN ZHU ; PING CHEN ; JING YANG ; LIQUN ZHANG. Influence of small indium content in quantum barriers on the luminescence properties of InGaN/InGaN double-quantum wells[J]. Optical Materials Express,2019,9(10):3941-3951.
APA FENG LIANG ; DEGANG ZHAO ; DESHENG JIANG ; ZONGSHUN LIU ; JIANJUN ZHU ; PING CHEN ; JING YANG ; LIQUN ZHANG.(2019).Influence of small indium content in quantum barriers on the luminescence properties of InGaN/InGaN double-quantum wells.Optical Materials Express,9(10),3941-3951.
MLA FENG LIANG ; DEGANG ZHAO ; DESHENG JIANG ; ZONGSHUN LIU ; JIANJUN ZHU ; PING CHEN ; JING YANG ; LIQUN ZHANG."Influence of small indium content in quantum barriers on the luminescence properties of InGaN/InGaN double-quantum wells".Optical Materials Express 9.10(2019):3941-3951.
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