SEMI OpenIR  > 中科院半导体材料科学重点实验室
Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Blocking Layer Structure
Huolin Huang ;   Feiyu Li ;   Zhonghao Sun ;   Nan Sun ;   Feng Zhang ;   Yaqing Cao ;  Hui Zhang Pengcheng Tao
2019
Source PublicationElectronics
Volume8Pages:241
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29512
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Huolin Huang ; Feiyu Li ; Zhonghao Sun ; Nan Sun ; Feng Zhang ; Yaqing Cao ;Hui Zhang Pengcheng Tao. Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Blocking Layer Structure[J]. Electronics,2019,8:241.
APA Huolin Huang ; Feiyu Li ; Zhonghao Sun ; Nan Sun ; Feng Zhang ; Yaqing Cao ;Hui Zhang Pengcheng Tao.(2019).Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Blocking Layer Structure.Electronics,8,241.
MLA Huolin Huang ; Feiyu Li ; Zhonghao Sun ; Nan Sun ; Feng Zhang ; Yaqing Cao ;Hui Zhang Pengcheng Tao."Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Blocking Layer Structure".Electronics 8(2019):241.
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