SEMI OpenIR  > 中科院半导体材料科学重点实验室
Effect of C-doped GaN film thickness on the structural and electrical properties of AlGaN/ GaN-based high electron mobility transistors
Weizhen Yao;  Lianshan Wang;  Fangzheng Li;  Yulin Meng;  Shaoyan Yang ;   Zhanguo Wang
2019
Source PublicationSemiconductor Science and Technology
Volume34Issue:12Pages:125006
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29511
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Weizhen Yao;Lianshan Wang;Fangzheng Li;Yulin Meng;Shaoyan Yang ; Zhanguo Wang. Effect of C-doped GaN film thickness on the structural and electrical properties of AlGaN/ GaN-based high electron mobility transistors[J]. Semiconductor Science and Technology,2019,34(12):125006.
APA Weizhen Yao;Lianshan Wang;Fangzheng Li;Yulin Meng;Shaoyan Yang ; Zhanguo Wang.(2019).Effect of C-doped GaN film thickness on the structural and electrical properties of AlGaN/ GaN-based high electron mobility transistors.Semiconductor Science and Technology,34(12),125006.
MLA Weizhen Yao;Lianshan Wang;Fangzheng Li;Yulin Meng;Shaoyan Yang ; Zhanguo Wang."Effect of C-doped GaN film thickness on the structural and electrical properties of AlGaN/ GaN-based high electron mobility transistors".Semiconductor Science and Technology 34.12(2019):125006.
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