Study of Asymmetric Cell Structure Tilt Implanted 4H-SiC Trench MOSFET | |
Weijiang Ni ; Xiaoliang Wang ; Miaolin Xu; Quan Wang ; Chun Feng; Honglin Xiao; Lijuan Jiang; Wei Li | |
2019 | |
Source Publication | IEEE Electron Device Letters
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Volume | 40Issue:5Pages:698-701 |
Indexed By | SCI |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/29510 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | Weijiang Ni ; Xiaoliang Wang ; Miaolin Xu; Quan Wang ; Chun Feng; Honglin Xiao; Lijuan Jiang; Wei Li. Study of Asymmetric Cell Structure Tilt Implanted 4H-SiC Trench MOSFET[J]. IEEE Electron Device Letters,2019,40(5):698-701. |
APA | Weijiang Ni ; Xiaoliang Wang ; Miaolin Xu; Quan Wang ; Chun Feng; Honglin Xiao; Lijuan Jiang; Wei Li.(2019).Study of Asymmetric Cell Structure Tilt Implanted 4H-SiC Trench MOSFET.IEEE Electron Device Letters,40(5),698-701. |
MLA | Weijiang Ni ; Xiaoliang Wang ; Miaolin Xu; Quan Wang ; Chun Feng; Honglin Xiao; Lijuan Jiang; Wei Li."Study of Asymmetric Cell Structure Tilt Implanted 4H-SiC Trench MOSFET".IEEE Electron Device Letters 40.5(2019):698-701. |
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Study of Asymmetric (1611KB) | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text |
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