| Study of Asymmetric Cell Structure Tilt Implanted 4H-SiC Trench MOSFET | |
| Weijiang Ni ; Xiaoliang Wang ; Miaolin Xu; Quan Wang ; Chun Feng; Honglin Xiao; Lijuan Jiang; Wei Li | |
| 2019 | |
| Source Publication | IEEE Electron Device Letters
 |
| Volume | 40Issue:5Pages:698-701 |
| Indexed By | SCI |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/29510 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Weijiang Ni ; Xiaoliang Wang ; Miaolin Xu; Quan Wang ; Chun Feng; Honglin Xiao; Lijuan Jiang; Wei Li. Study of Asymmetric Cell Structure Tilt Implanted 4H-SiC Trench MOSFET[J]. IEEE Electron Device Letters,2019,40(5):698-701. |
| APA | Weijiang Ni ; Xiaoliang Wang ; Miaolin Xu; Quan Wang ; Chun Feng; Honglin Xiao; Lijuan Jiang; Wei Li.(2019).Study of Asymmetric Cell Structure Tilt Implanted 4H-SiC Trench MOSFET.IEEE Electron Device Letters,40(5),698-701. |
| MLA | Weijiang Ni ; Xiaoliang Wang ; Miaolin Xu; Quan Wang ; Chun Feng; Honglin Xiao; Lijuan Jiang; Wei Li."Study of Asymmetric Cell Structure Tilt Implanted 4H-SiC Trench MOSFET".IEEE Electron Device Letters 40.5(2019):698-701. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Study of Asymmetric （1611KB） | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text | |
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment