SEMI OpenIR  > 中科院半导体材料科学重点实验室
Study of Asymmetric Cell Structure Tilt Implanted 4H-SiC Trench MOSFET
Weijiang Ni ;   Xiaoliang Wang ;   Miaolin Xu;   Quan Wang ;   Chun Feng;   Honglin Xiao;   Lijuan Jiang;   Wei Li
2019
Source PublicationIEEE Electron Device Letters
Volume40Issue:5Pages:698-701
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29510
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Weijiang Ni ; Xiaoliang Wang ; Miaolin Xu; Quan Wang ; Chun Feng; Honglin Xiao; Lijuan Jiang; Wei Li. Study of Asymmetric Cell Structure Tilt Implanted 4H-SiC Trench MOSFET[J]. IEEE Electron Device Letters,2019,40(5):698-701.
APA Weijiang Ni ; Xiaoliang Wang ; Miaolin Xu; Quan Wang ; Chun Feng; Honglin Xiao; Lijuan Jiang; Wei Li.(2019).Study of Asymmetric Cell Structure Tilt Implanted 4H-SiC Trench MOSFET.IEEE Electron Device Letters,40(5),698-701.
MLA Weijiang Ni ; Xiaoliang Wang ; Miaolin Xu; Quan Wang ; Chun Feng; Honglin Xiao; Lijuan Jiang; Wei Li."Study of Asymmetric Cell Structure Tilt Implanted 4H-SiC Trench MOSFET".IEEE Electron Device Letters 40.5(2019):698-701.
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