SEMI OpenIR  > 中科院半导体材料科学重点实验室
Long wavelength type II InAs/GaSb superlattice photodetector using resonant tunneling diode structure
Biying Nie;   Jianliang Huang;   Chengcheng Zhao;   Yanhua Zhang;   Wenquan Ma
2019
Source PublicationIEEE Electron Device Letters
Volume41Issue:1Pages:73-75
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29505
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Biying Nie; Jianliang Huang; Chengcheng Zhao; Yanhua Zhang; Wenquan Ma. Long wavelength type II InAs/GaSb superlattice photodetector using resonant tunneling diode structure[J]. IEEE Electron Device Letters,2019,41(1):73-75.
APA Biying Nie; Jianliang Huang; Chengcheng Zhao; Yanhua Zhang; Wenquan Ma.(2019).Long wavelength type II InAs/GaSb superlattice photodetector using resonant tunneling diode structure.IEEE Electron Device Letters,41(1),73-75.
MLA Biying Nie; Jianliang Huang; Chengcheng Zhao; Yanhua Zhang; Wenquan Ma."Long wavelength type II InAs/GaSb superlattice photodetector using resonant tunneling diode structure".IEEE Electron Device Letters 41.1(2019):73-75.
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