InAs/GaSb superlattice resonant tunneling diode photodetector with InAs/AlSb double barrier structure | |
Biying Nie; Jianliang Huang; Chengcheng Zhao; Wenjun Huang; Yanhua Zhang; Yulian Cao; Wenquan Ma | |
2019 | |
Source Publication | Applied Physics Letters
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Volume | 114Pages:053509 |
Indexed By | SCI |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/29504 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | Biying Nie; Jianliang Huang; Chengcheng Zhao; Wenjun Huang; Yanhua Zhang; Yulian Cao; Wenquan Ma. InAs/GaSb superlattice resonant tunneling diode photodetector with InAs/AlSb double barrier structure[J]. Applied Physics Letters,2019,114:053509. |
APA | Biying Nie; Jianliang Huang; Chengcheng Zhao; Wenjun Huang; Yanhua Zhang; Yulian Cao; Wenquan Ma.(2019).InAs/GaSb superlattice resonant tunneling diode photodetector with InAs/AlSb double barrier structure.Applied Physics Letters,114,053509. |
MLA | Biying Nie; Jianliang Huang; Chengcheng Zhao; Wenjun Huang; Yanhua Zhang; Yulian Cao; Wenquan Ma."InAs/GaSb superlattice resonant tunneling diode photodetector with InAs/AlSb double barrier structure".Applied Physics Letters 114(2019):053509. |
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InAsGaSb superlattic(1303KB) | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text |
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