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InAs/GaSb superlattice resonant tunneling diode photodetector with InAs/AlSb double barrier structure
Biying Nie;   Jianliang Huang;   Chengcheng Zhao;   Wenjun Huang;   Yanhua Zhang;   Yulian Cao;   Wenquan Ma
2019
Source PublicationApplied Physics Letters
Volume114Pages:053509
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29504
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Biying Nie; Jianliang Huang; Chengcheng Zhao; Wenjun Huang; Yanhua Zhang; Yulian Cao; Wenquan Ma. InAs/GaSb superlattice resonant tunneling diode photodetector with InAs/AlSb double barrier structure[J]. Applied Physics Letters,2019,114:053509.
APA Biying Nie; Jianliang Huang; Chengcheng Zhao; Wenjun Huang; Yanhua Zhang; Yulian Cao; Wenquan Ma.(2019).InAs/GaSb superlattice resonant tunneling diode photodetector with InAs/AlSb double barrier structure.Applied Physics Letters,114,053509.
MLA Biying Nie; Jianliang Huang; Chengcheng Zhao; Wenjun Huang; Yanhua Zhang; Yulian Cao; Wenquan Ma."InAs/GaSb superlattice resonant tunneling diode photodetector with InAs/AlSb double barrier structure".Applied Physics Letters 114(2019):053509.
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