| InAs/GaSb superlattice resonant tunneling diode photodetector with InAs/AlSb double barrier structure | |
| Biying Nie; Jianliang Huang; Chengcheng Zhao; Wenjun Huang; Yanhua Zhang; Yulian Cao; Wenquan Ma | |
| 2019 | |
| Source Publication | Applied Physics Letters
 |
| Volume | 114Pages:053509 |
| Indexed By | SCI |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/29504 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Biying Nie; Jianliang Huang; Chengcheng Zhao; Wenjun Huang; Yanhua Zhang; Yulian Cao; Wenquan Ma. InAs/GaSb superlattice resonant tunneling diode photodetector with InAs/AlSb double barrier structure[J]. Applied Physics Letters,2019,114:053509. |
| APA | Biying Nie; Jianliang Huang; Chengcheng Zhao; Wenjun Huang; Yanhua Zhang; Yulian Cao; Wenquan Ma.(2019).InAs/GaSb superlattice resonant tunneling diode photodetector with InAs/AlSb double barrier structure.Applied Physics Letters,114,053509. |
| MLA | Biying Nie; Jianliang Huang; Chengcheng Zhao; Wenjun Huang; Yanhua Zhang; Yulian Cao; Wenquan Ma."InAs/GaSb superlattice resonant tunneling diode photodetector with InAs/AlSb double barrier structure".Applied Physics Letters 114(2019):053509. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| InAsGaSb superlattic（1303KB） | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text | |
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