SEMI OpenIR  > 半导体超晶格国家重点实验室
Recent progress in diamond-based MOSFETs
Xiao-lu Yuan;  Yu-ting Zheng;  Xiao-hua Zhu;  Jin-long Liu;  Jiang-wei Liu;  Cheng-ming Li;  Peng Jin;  Zhan-guo Wang
2019
Source PublicationInternational Journal of Minerals, Metallurgy, and Materials
Volume26Issue:10Pages:1195-1205
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29499
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Xiao-lu Yuan;Yu-ting Zheng;Xiao-hua Zhu;Jin-long Liu;Jiang-wei Liu;Cheng-ming Li;Peng Jin;Zhan-guo Wang. Recent progress in diamond-based MOSFETs[J]. International Journal of Minerals, Metallurgy, and Materials,2019,26(10):1195-1205.
APA Xiao-lu Yuan;Yu-ting Zheng;Xiao-hua Zhu;Jin-long Liu;Jiang-wei Liu;Cheng-ming Li;Peng Jin;Zhan-guo Wang.(2019).Recent progress in diamond-based MOSFETs.International Journal of Minerals, Metallurgy, and Materials,26(10),1195-1205.
MLA Xiao-lu Yuan;Yu-ting Zheng;Xiao-hua Zhu;Jin-long Liu;Jiang-wei Liu;Cheng-ming Li;Peng Jin;Zhan-guo Wang."Recent progress in diamond-based MOSFETs".International Journal of Minerals, Metallurgy, and Materials 26.10(2019):1195-1205.
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