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Foreign-catalyst-free GaSb nanowires directly grown on cleaved Si substrates by molecular- beam epitaxy
Lianjun Wen;  Dong Pan;  Dunyuan Liao;  Jianhua Zhao
2019
Source PublicationNanotechnology
Volume31Issue:15Pages:1-10
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29491
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Lianjun Wen;Dong Pan;Dunyuan Liao;Jianhua Zhao. Foreign-catalyst-free GaSb nanowires directly grown on cleaved Si substrates by molecular- beam epitaxy[J]. Nanotechnology,2019,31(15):1-10.
APA Lianjun Wen;Dong Pan;Dunyuan Liao;Jianhua Zhao.(2019).Foreign-catalyst-free GaSb nanowires directly grown on cleaved Si substrates by molecular- beam epitaxy.Nanotechnology,31(15),1-10.
MLA Lianjun Wen;Dong Pan;Dunyuan Liao;Jianhua Zhao."Foreign-catalyst-free GaSb nanowires directly grown on cleaved Si substrates by molecular- beam epitaxy".Nanotechnology 31.15(2019):1-10.
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