Knowledge Management System Of Institute of Semiconductors,CAS
Foreign-catalyst-free GaSb nanowires directly grown on cleaved Si substrates by molecular- beam epitaxy | |
Lianjun Wen; Dong Pan; Dunyuan Liao; Jianhua Zhao | |
2019 | |
Source Publication | Nanotechnology
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Volume | 31Issue:15Pages:1-10 |
Indexed By | SCI |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/29491 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | Lianjun Wen;Dong Pan;Dunyuan Liao;Jianhua Zhao. Foreign-catalyst-free GaSb nanowires directly grown on cleaved Si substrates by molecular- beam epitaxy[J]. Nanotechnology,2019,31(15):1-10. |
APA | Lianjun Wen;Dong Pan;Dunyuan Liao;Jianhua Zhao.(2019).Foreign-catalyst-free GaSb nanowires directly grown on cleaved Si substrates by molecular- beam epitaxy.Nanotechnology,31(15),1-10. |
MLA | Lianjun Wen;Dong Pan;Dunyuan Liao;Jianhua Zhao."Foreign-catalyst-free GaSb nanowires directly grown on cleaved Si substrates by molecular- beam epitaxy".Nanotechnology 31.15(2019):1-10. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
10 Foreign-catalyst-(1853KB) | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text |
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