Foreign-catalyst-free GaSb nanowires directly grown on cleaved Si substrates by molecular- beam epitaxy

	Foreign-catalyst-free GaSb nanowires directly grown on cleaved Si substrates by molecular- beam epitaxy
	Lianjun Wen; Dong Pan; Dunyuan Liao; Jianhua Zhao
	2019
Source Publication	Nanotechnology
Volume	31 Issue:15 Pages:1-10
Indexed By	SCI
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/29491
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	Lianjun Wen;Dong Pan;Dunyuan Liao;Jianhua Zhao. Foreign-catalyst-free GaSb nanowires directly grown on cleaved Si substrates by molecular- beam epitaxy[J]. Nanotechnology,2019,31(15):1-10.
APA	Lianjun Wen;Dong Pan;Dunyuan Liao;Jianhua Zhao.(2019).Foreign-catalyst-free GaSb nanowires directly grown on cleaved Si substrates by molecular- beam epitaxy.Nanotechnology,31(15),1-10.
MLA	Lianjun Wen;Dong Pan;Dunyuan Liao;Jianhua Zhao."Foreign-catalyst-free GaSb nanowires directly grown on cleaved Si substrates by molecular- beam epitaxy".Nanotechnology 31.15(2019):1-10.

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