SEMI OpenIR  > 半导体超晶格国家重点实验室
Observation of tunneling magnetoresistance effect in L1 0 -MnAl/MgO/ Co 2 MnSi/MnAl perpendicular magnetic tunnel junctions
Siwei Mao ;   Jun Lu ;   Hailong Wang ;   Xupeng Zhao ;   Dahai Wei ;   Jianhua Zhao
2019
Source PublicationJournal of Physics D: Applied Physics
Volume52Pages:405002
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29487
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Siwei Mao ; Jun Lu ; Hailong Wang ; Xupeng Zhao ; Dahai Wei ; Jianhua Zhao. Observation of tunneling magnetoresistance effect in L1 0 -MnAl/MgO/ Co 2 MnSi/MnAl perpendicular magnetic tunnel junctions[J]. Journal of Physics D: Applied Physics,2019,52:405002.
APA Siwei Mao ; Jun Lu ; Hailong Wang ; Xupeng Zhao ; Dahai Wei ; Jianhua Zhao.(2019).Observation of tunneling magnetoresistance effect in L1 0 -MnAl/MgO/ Co 2 MnSi/MnAl perpendicular magnetic tunnel junctions.Journal of Physics D: Applied Physics,52,405002.
MLA Siwei Mao ; Jun Lu ; Hailong Wang ; Xupeng Zhao ; Dahai Wei ; Jianhua Zhao."Observation of tunneling magnetoresistance effect in L1 0 -MnAl/MgO/ Co 2 MnSi/MnAl perpendicular magnetic tunnel junctions".Journal of Physics D: Applied Physics 52(2019):405002.
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