SEMI OpenIR  > 半导体超晶格国家重点实验室
High material quality growth of AlInAsSb thin films on GaSb substrate by molecular beam epitaxy
Fa-Ran Chang ;   Rui-Ting Hao ;   Tong-Tong Qi ;   Qi-Chen Zhao ;   Xin-Xing Liu ;   Yong Li ;   Kang Gu ;   Jie Guo ;   Guo-Wei Wang ;   Ying-Qiang Xu ;   Zhi-Chuan Niu
2019
Source PublicationChinese Physics B
Volume28Issue:2Pages:028503
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29476
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Fa-Ran Chang ; Rui-Ting Hao ; Tong-Tong Qi ; Qi-Chen Zhao ; Xin-Xing Liu ; Yong Li ; Kang Gu ; Jie Guo ; Guo-Wei Wang ; Ying-Qiang Xu ; Zhi-Chuan Niu. High material quality growth of AlInAsSb thin films on GaSb substrate by molecular beam epitaxy[J]. Chinese Physics B,2019,28(2):028503.
APA Fa-Ran Chang ; Rui-Ting Hao ; Tong-Tong Qi ; Qi-Chen Zhao ; Xin-Xing Liu ; Yong Li ; Kang Gu ; Jie Guo ; Guo-Wei Wang ; Ying-Qiang Xu ; Zhi-Chuan Niu.(2019).High material quality growth of AlInAsSb thin films on GaSb substrate by molecular beam epitaxy.Chinese Physics B,28(2),028503.
MLA Fa-Ran Chang ; Rui-Ting Hao ; Tong-Tong Qi ; Qi-Chen Zhao ; Xin-Xing Liu ; Yong Li ; Kang Gu ; Jie Guo ; Guo-Wei Wang ; Ying-Qiang Xu ; Zhi-Chuan Niu."High material quality growth of AlInAsSb thin films on GaSb substrate by molecular beam epitaxy".Chinese Physics B 28.2(2019):028503.
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