Knowledge Management System Of Institute of Semiconductors,CAS
| Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy | |
| Jing Zhang ; Hongliang Lv ; Haiqiao Ni ; Shizheng Yang ; Xiaoran Cui ; Zhichuan Niu ; Yimen Zhang ; Yuming Zhang | |
| 2019 | |
| Source Publication | Chinese Physics B
 |
| Volume | 28Issue:2Pages:028101 |
| Indexed By | SCI |
| Language | 英语 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/29475 |
| Collection | 半导体超晶格国家重点实验室 |
| Recommended Citation GB/T 7714 | Jing Zhang ; Hongliang Lv ; Haiqiao Ni ; Shizheng Yang ; Xiaoran Cui ; Zhichuan Niu ; Yimen Zhang ; Yuming Zhang. Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy[J]. Chinese Physics B,2019,28(2):028101. |
| APA | Jing Zhang ; Hongliang Lv ; Haiqiao Ni ; Shizheng Yang ; Xiaoran Cui ; Zhichuan Niu ; Yimen Zhang ; Yuming Zhang.(2019).Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy.Chinese Physics B,28(2),028101. |
| MLA | Jing Zhang ; Hongliang Lv ; Haiqiao Ni ; Shizheng Yang ; Xiaoran Cui ; Zhichuan Niu ; Yimen Zhang ; Yuming Zhang."Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy".Chinese Physics B 28.2(2019):028101. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Effects of growth te（1357KB） | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text | |
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