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Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy
Jing Zhang ;   Hongliang Lv ;   Haiqiao Ni ;   Shizheng Yang ;   Xiaoran Cui ;   Zhichuan Niu ;   Yimen Zhang ;   Yuming Zhang
2019
Source PublicationChinese Physics B
Volume28Issue:2Pages:028101
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29475
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Jing Zhang ; Hongliang Lv ; Haiqiao Ni ; Shizheng Yang ; Xiaoran Cui ; Zhichuan Niu ; Yimen Zhang ; Yuming Zhang. Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy[J]. Chinese Physics B,2019,28(2):028101.
APA Jing Zhang ; Hongliang Lv ; Haiqiao Ni ; Shizheng Yang ; Xiaoran Cui ; Zhichuan Niu ; Yimen Zhang ; Yuming Zhang.(2019).Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy.Chinese Physics B,28(2),028101.
MLA Jing Zhang ; Hongliang Lv ; Haiqiao Ni ; Shizheng Yang ; Xiaoran Cui ; Zhichuan Niu ; Yimen Zhang ; Yuming Zhang."Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy".Chinese Physics B 28.2(2019):028101.
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