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Effect of growth temperature of GaAs 𝑦 Sb 1−𝑦 metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate
Jing Zhang;  Hong-Liang Lv;  Hai-Qiao Ni;  Shi-Zheng Yang;  Xiao-Ran Cui;  Zhi-Chuan Niu;  Yi-Men Zhang and Yu-Ming Zhang
2019
Source PublicationChinese Physics B
Volume28Issue:11Pages:118102
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29474
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Jing Zhang;Hong-Liang Lv;Hai-Qiao Ni;Shi-Zheng Yang;Xiao-Ran Cui;Zhi-Chuan Niu;Yi-Men Zhang and Yu-Ming Zhang. Effect of growth temperature of GaAs 𝑦 Sb 1−𝑦 metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate[J]. Chinese Physics B,2019,28(11):118102.
APA Jing Zhang;Hong-Liang Lv;Hai-Qiao Ni;Shi-Zheng Yang;Xiao-Ran Cui;Zhi-Chuan Niu;Yi-Men Zhang and Yu-Ming Zhang.(2019).Effect of growth temperature of GaAs 𝑦 Sb 1−𝑦 metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate.Chinese Physics B,28(11),118102.
MLA Jing Zhang;Hong-Liang Lv;Hai-Qiao Ni;Shi-Zheng Yang;Xiao-Ran Cui;Zhi-Chuan Niu;Yi-Men Zhang and Yu-Ming Zhang."Effect of growth temperature of GaAs 𝑦 Sb 1−𝑦 metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate".Chinese Physics B 28.11(2019):118102.
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