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2.1 μ m InGaSb quantum well lasers exhibiting the maximum conversion efficiency of 27.5% with digitally grown AlGaAsSb barriers and gradient layers
Shengwen Xie ;   Chengao Yang ;   ShuShan Huang ;   Ye Yuan ;   Yi Zhang ;   Jinming Shang ;   Chenyuan Cai ;   Yu Zhang ;   Yingqiang Xu ;   Haiqiao Ni ;   Zhichuan Niu
2019
Source PublicationSuperlattices and Microstructures
Volume130Pages:339-345
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29473
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Shengwen Xie ; Chengao Yang ; ShuShan Huang ; Ye Yuan ; Yi Zhang ; Jinming Shang ; Chenyuan Cai ; Yu Zhang ; Yingqiang Xu ; Haiqiao Ni ; Zhichuan Niu. 2.1 μ m InGaSb quantum well lasers exhibiting the maximum conversion efficiency of 27.5% with digitally grown AlGaAsSb barriers and gradient layers[J]. Superlattices and Microstructures,2019,130:339-345.
APA Shengwen Xie ; Chengao Yang ; ShuShan Huang ; Ye Yuan ; Yi Zhang ; Jinming Shang ; Chenyuan Cai ; Yu Zhang ; Yingqiang Xu ; Haiqiao Ni ; Zhichuan Niu.(2019).2.1 μ m InGaSb quantum well lasers exhibiting the maximum conversion efficiency of 27.5% with digitally grown AlGaAsSb barriers and gradient layers.Superlattices and Microstructures,130,339-345.
MLA Shengwen Xie ; Chengao Yang ; ShuShan Huang ; Ye Yuan ; Yi Zhang ; Jinming Shang ; Chenyuan Cai ; Yu Zhang ; Yingqiang Xu ; Haiqiao Ni ; Zhichuan Niu."2.1 μ m InGaSb quantum well lasers exhibiting the maximum conversion efficiency of 27.5% with digitally grown AlGaAsSb barriers and gradient layers".Superlattices and Microstructures 130(2019):339-345.
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