SEMI OpenIR  > 半导体超晶格国家重点实验室
Heterointerface-Driven Band Alignment Engineering and its Impact on Macro-Performance in Semiconductor Multilayer Nanostructures
Chenyuan Cai;   Yunhao Zhao;   Shengwen Xie;   Xuebing Zhao;   Yu Zhang;   Yingqiang Xu;   Chongyun Liang;   Zhichuan Niu;   Yi Shi;   Yuesheng Li;   Renchao Che
2019
Source PublicationSmall
Pages1900837
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29465
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Chenyuan Cai; Yunhao Zhao; Shengwen Xie; Xuebing Zhao; Yu Zhang; Yingqiang Xu; Chongyun Liang; Zhichuan Niu; Yi Shi; Yuesheng Li; Renchao Che. Heterointerface-Driven Band Alignment Engineering and its Impact on Macro-Performance in Semiconductor Multilayer Nanostructures[J]. Small,2019:1900837.
APA Chenyuan Cai; Yunhao Zhao; Shengwen Xie; Xuebing Zhao; Yu Zhang; Yingqiang Xu; Chongyun Liang; Zhichuan Niu; Yi Shi; Yuesheng Li; Renchao Che.(2019).Heterointerface-Driven Band Alignment Engineering and its Impact on Macro-Performance in Semiconductor Multilayer Nanostructures.Small,1900837.
MLA Chenyuan Cai; Yunhao Zhao; Shengwen Xie; Xuebing Zhao; Yu Zhang; Yingqiang Xu; Chongyun Liang; Zhichuan Niu; Yi Shi; Yuesheng Li; Renchao Che."Heterointerface-Driven Band Alignment Engineering and its Impact on Macro-Performance in Semiconductor Multilayer Nanostructures".Small (2019):1900837.
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