Heterointerface-Driven Band Alignment Engineering and its Impact on Macro-Performance in Semiconductor Multilayer Nanostructures

	Heterointerface-Driven Band Alignment Engineering and its Impact on Macro-Performance in Semiconductor Multilayer Nanostructures
	Chenyuan Cai; Yunhao Zhao; Shengwen Xie; Xuebing Zhao; Yu Zhang; Yingqiang Xu; Chongyun Liang; Zhichuan Niu; Yi Shi; Yuesheng Li; Renchao Che
	2019
Source Publication	Small
Pages	1900837
Indexed By	SCI
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/29465
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	Chenyuan Cai; Yunhao Zhao; Shengwen Xie; Xuebing Zhao; Yu Zhang; Yingqiang Xu; Chongyun Liang; Zhichuan Niu; Yi Shi; Yuesheng Li; Renchao Che. Heterointerface-Driven Band Alignment Engineering and its Impact on Macro-Performance in Semiconductor Multilayer Nanostructures[J]. Small,2019:1900837.
APA	Chenyuan Cai; Yunhao Zhao; Shengwen Xie; Xuebing Zhao; Yu Zhang; Yingqiang Xu; Chongyun Liang; Zhichuan Niu; Yi Shi; Yuesheng Li; Renchao Che.(2019).Heterointerface-Driven Band Alignment Engineering and its Impact on Macro-Performance in Semiconductor Multilayer Nanostructures.Small,1900837.
MLA	Chenyuan Cai; Yunhao Zhao; Shengwen Xie; Xuebing Zhao; Yu Zhang; Yingqiang Xu; Chongyun Liang; Zhichuan Niu; Yi Shi; Yuesheng Li; Renchao Che."Heterointerface-Driven Band Alignment Engineering and its Impact on Macro-Performance in Semiconductor Multilayer Nanostructures".Small (2019):1900837.

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