Control of electron tunnelling by fine band engineering of semiconductor potential barriers

	Control of electron tunnelling by fine band engineering of semiconductor potential barriers
	Yunhao Zhao; Chenyuan Cai; Yi Zhang; Xuebing Zhao; Yingqiang Xu; Chongyun Liang; Zhichuan Niu; Yi Shi ; Renchao Che
	2019
Source Publication	Nanoscale
Volume	11 Issue:44 Pages:21376-21385
Indexed By	SCI
Language	英语
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/29464
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	Yunhao Zhao; Chenyuan Cai; Yi Zhang; Xuebing Zhao; Yingqiang Xu; Chongyun Liang; Zhichuan Niu; Yi Shi ; Renchao Che. Control of electron tunnelling by fine band engineering of semiconductor potential barriers[J]. Nanoscale,2019,11(44):21376-21385.
APA	Yunhao Zhao; Chenyuan Cai; Yi Zhang; Xuebing Zhao; Yingqiang Xu; Chongyun Liang; Zhichuan Niu; Yi Shi ; Renchao Che.(2019).Control of electron tunnelling by fine band engineering of semiconductor potential barriers.Nanoscale,11(44),21376-21385.
MLA	Yunhao Zhao; Chenyuan Cai; Yi Zhang; Xuebing Zhao; Yingqiang Xu; Chongyun Liang; Zhichuan Niu; Yi Shi ; Renchao Che."Control of electron tunnelling by fine band engineering of semiconductor potential barriers".Nanoscale 11.44(2019):21376-21385.

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