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Control of electron tunnelling by fine band engineering of semiconductor potential barriers
Yunhao Zhao;   Chenyuan Cai;   Yi Zhang;   Xuebing Zhao;   Yingqiang Xu;   Chongyun Liang;   Zhichuan Niu;   Yi Shi ;   Renchao Che
2019
Source PublicationNanoscale
Volume11Issue:44Pages:21376-21385
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29464
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Yunhao Zhao; Chenyuan Cai; Yi Zhang; Xuebing Zhao; Yingqiang Xu; Chongyun Liang; Zhichuan Niu; Yi Shi ; Renchao Che. Control of electron tunnelling by fine band engineering of semiconductor potential barriers[J]. Nanoscale,2019,11(44):21376-21385.
APA Yunhao Zhao; Chenyuan Cai; Yi Zhang; Xuebing Zhao; Yingqiang Xu; Chongyun Liang; Zhichuan Niu; Yi Shi ; Renchao Che.(2019).Control of electron tunnelling by fine band engineering of semiconductor potential barriers.Nanoscale,11(44),21376-21385.
MLA Yunhao Zhao; Chenyuan Cai; Yi Zhang; Xuebing Zhao; Yingqiang Xu; Chongyun Liang; Zhichuan Niu; Yi Shi ; Renchao Che."Control of electron tunnelling by fine band engineering of semiconductor potential barriers".Nanoscale 11.44(2019):21376-21385.
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