SEMI OpenIR  > 半导体超晶格国家重点实验室
The study on fabrication and characterization of Al 0.2 In 0.8 Sb/InAs 0.4 Sb 0.6 heterostructures by molecular beam epitaxy
Jing Zhang;  Hongliang Lv;  Yifeng Song;  Haiqiao Ni;  Zhichuan Niu;  Yuming Zhang;   Senior Member, IEEE
2019
Source PublicationIEEE Access
Volume7Pages:102710-102716
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29463
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Jing Zhang;Hongliang Lv;Yifeng Song;Haiqiao Ni;Zhichuan Niu;Yuming Zhang; Senior Member, IEEE. The study on fabrication and characterization of Al 0.2 In 0.8 Sb/InAs 0.4 Sb 0.6 heterostructures by molecular beam epitaxy[J]. IEEE Access,2019,7:102710-102716.
APA Jing Zhang;Hongliang Lv;Yifeng Song;Haiqiao Ni;Zhichuan Niu;Yuming Zhang; Senior Member, IEEE.(2019).The study on fabrication and characterization of Al 0.2 In 0.8 Sb/InAs 0.4 Sb 0.6 heterostructures by molecular beam epitaxy.IEEE Access,7,102710-102716.
MLA Jing Zhang;Hongliang Lv;Yifeng Song;Haiqiao Ni;Zhichuan Niu;Yuming Zhang; Senior Member, IEEE."The study on fabrication and characterization of Al 0.2 In 0.8 Sb/InAs 0.4 Sb 0.6 heterostructures by molecular beam epitaxy".IEEE Access 7(2019):102710-102716.
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