Electronic and optical properties of an intrinsic type-I band alignment ZrS 2 /SnS 2 van der Waals heterostructure for optoelectronic devices

	Electronic and optical properties of an intrinsic type-I band alignment ZrS 2 /SnS 2 van der Waals heterostructure for optoelectronic devices
	Jimin Shang ; Shuai Zhang ; Yongqiang Wang ; Hongyu Wen ; Zhongming Wei
	2019
Source Publication	CHINESE OPTICS LETTERS
Volume	17 Issue:2 Pages:020010
Indexed By	SCI
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/29434
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	Jimin Shang ; Shuai Zhang ; Yongqiang Wang ; Hongyu Wen ; Zhongming Wei. Electronic and optical properties of an intrinsic type-I band alignment ZrS 2 /SnS 2 van der Waals heterostructure for optoelectronic devices[J]. CHINESE OPTICS LETTERS,2019,17(2):020010.
APA	Jimin Shang ; Shuai Zhang ; Yongqiang Wang ; Hongyu Wen ; Zhongming Wei.(2019).Electronic and optical properties of an intrinsic type-I band alignment ZrS 2 /SnS 2 van der Waals heterostructure for optoelectronic devices.CHINESE OPTICS LETTERS,17(2),020010.
MLA	Jimin Shang ; Shuai Zhang ; Yongqiang Wang ; Hongyu Wen ; Zhongming Wei."Electronic and optical properties of an intrinsic type-I band alignment ZrS 2 /SnS 2 van der Waals heterostructure for optoelectronic devices".CHINESE OPTICS LETTERS 17.2(2019):020010.

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