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Epitaxial growth of large-scale In 2 S 3 nanoflakes and the construction of a high performance In 2 S 3 /Si photodetector
Jianting Lu;  Zhaoqiang Zheng;  Wei Gao;  Jiandong Yao;  Yu Zhao;  Ye Xiao;  Bing Wang;  Jingbo Li
2019
Source PublicationJournal of Materials Chemistry C
Volume7Issue:39Pages:12104-12113
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29430
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Jianting Lu;Zhaoqiang Zheng;Wei Gao;Jiandong Yao;Yu Zhao;Ye Xiao;Bing Wang;Jingbo Li. Epitaxial growth of large-scale In 2 S 3 nanoflakes and the construction of a high performance In 2 S 3 /Si photodetector[J]. Journal of Materials Chemistry C,2019,7(39):12104-12113.
APA Jianting Lu;Zhaoqiang Zheng;Wei Gao;Jiandong Yao;Yu Zhao;Ye Xiao;Bing Wang;Jingbo Li.(2019).Epitaxial growth of large-scale In 2 S 3 nanoflakes and the construction of a high performance In 2 S 3 /Si photodetector.Journal of Materials Chemistry C,7(39),12104-12113.
MLA Jianting Lu;Zhaoqiang Zheng;Wei Gao;Jiandong Yao;Yu Zhao;Ye Xiao;Bing Wang;Jingbo Li."Epitaxial growth of large-scale In 2 S 3 nanoflakes and the construction of a high performance In 2 S 3 /Si photodetector".Journal of Materials Chemistry C 7.39(2019):12104-12113.
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