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Exploring the Designs of p-Type Piezoelectric FinFETs Based on NEGF Transport Simulations Comprising Phonon Scattering
Yuxiong Long;   Jun Z. Huang;   Qianqian Huang;   Member,IEEE ;   Nuo Xu ;   Member,IEEE ;   Xiangwei Jiang ;   Member,IEEE ;   Zhi-Chuan Niu ;   David Esseni ;   Fellow,IEEE ;   Ru Huang;   Fellow,IEEE ;   Shu-Shen Li
2019
Source PublicationIEEE Transactions on Electron Devices
Volume66Issue:11Pages:4982-4988
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29418
Collection半导体超晶格国家重点实验室
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GB/T 7714
Yuxiong Long; Jun Z. Huang; Qianqian Huang; Member,IEEE ; Nuo Xu ; Member,IEEE ; Xiangwei Jiang ; Member,IEEE ; Zhi-Chuan Niu ; David Esseni ; Fellow,IEEE ; Ru Huang; Fellow,IEEE ; Shu-Shen Li. Exploring the Designs of p-Type Piezoelectric FinFETs Based on NEGF Transport Simulations Comprising Phonon Scattering[J]. IEEE Transactions on Electron Devices,2019,66(11):4982-4988.
APA Yuxiong Long; Jun Z. Huang; Qianqian Huang; Member,IEEE ; Nuo Xu ; Member,IEEE ; Xiangwei Jiang ; Member,IEEE ; Zhi-Chuan Niu ; David Esseni ; Fellow,IEEE ; Ru Huang; Fellow,IEEE ; Shu-Shen Li.(2019).Exploring the Designs of p-Type Piezoelectric FinFETs Based on NEGF Transport Simulations Comprising Phonon Scattering.IEEE Transactions on Electron Devices,66(11),4982-4988.
MLA Yuxiong Long; Jun Z. Huang; Qianqian Huang; Member,IEEE ; Nuo Xu ; Member,IEEE ; Xiangwei Jiang ; Member,IEEE ; Zhi-Chuan Niu ; David Esseni ; Fellow,IEEE ; Ru Huang; Fellow,IEEE ; Shu-Shen Li."Exploring the Designs of p-Type Piezoelectric FinFETs Based on NEGF Transport Simulations Comprising Phonon Scattering".IEEE Transactions on Electron Devices 66.11(2019):4982-4988.
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