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Characterizing the Charge Trapping across Crystalline and Amorphous Si/SiO 2 /HfO 2 Stacks from First-Principle Calculations
Yue-Yang Liu;   Feilong Liu;   Runsheng Wang;   Jun-Wei Luo;   Xiangwei Jiang ;   Ru Huang;   Shu-Shen Li;   Lin-Wang Wang
2019
Source PublicationPHYSICAL REVIEW APPLIED
Volume12Pages:064012
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29416
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Yue-Yang Liu; Feilong Liu; Runsheng Wang; Jun-Wei Luo; Xiangwei Jiang ; Ru Huang; Shu-Shen Li; Lin-Wang Wang. Characterizing the Charge Trapping across Crystalline and Amorphous Si/SiO 2 /HfO 2 Stacks from First-Principle Calculations[J]. PHYSICAL REVIEW APPLIED,2019,12:064012.
APA Yue-Yang Liu; Feilong Liu; Runsheng Wang; Jun-Wei Luo; Xiangwei Jiang ; Ru Huang; Shu-Shen Li; Lin-Wang Wang.(2019).Characterizing the Charge Trapping across Crystalline and Amorphous Si/SiO 2 /HfO 2 Stacks from First-Principle Calculations.PHYSICAL REVIEW APPLIED,12,064012.
MLA Yue-Yang Liu; Feilong Liu; Runsheng Wang; Jun-Wei Luo; Xiangwei Jiang ; Ru Huang; Shu-Shen Li; Lin-Wang Wang."Characterizing the Charge Trapping across Crystalline and Amorphous Si/SiO 2 /HfO 2 Stacks from First-Principle Calculations".PHYSICAL REVIEW APPLIED 12(2019):064012.
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