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Multiscale simulation of lateral charge loss in Si 3 N 4 3D NAND flash based on density functional theory
Jixuan Wu ;   Jiezhi Chen ;   Xiangwei Jiang
2019
Source PublicationJournal of Physics D: Applied Physics
Volume52Pages:395103
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29415
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Jixuan Wu ; Jiezhi Chen ; Xiangwei Jiang. Multiscale simulation of lateral charge loss in Si 3 N 4 3D NAND flash based on density functional theory[J]. Journal of Physics D: Applied Physics,2019,52:395103.
APA Jixuan Wu ; Jiezhi Chen ; Xiangwei Jiang.(2019).Multiscale simulation of lateral charge loss in Si 3 N 4 3D NAND flash based on density functional theory.Journal of Physics D: Applied Physics,52,395103.
MLA Jixuan Wu ; Jiezhi Chen ; Xiangwei Jiang."Multiscale simulation of lateral charge loss in Si 3 N 4 3D NAND flash based on density functional theory".Journal of Physics D: Applied Physics 52(2019):395103.
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