SEMI OpenIR  > 半导体超晶格国家重点实验室
Ab Initio Investigation of Charge Trapping Across the Crystalline-Si–Amorphous-SiO 2 Interface
Yue-Yang Liu;   Fan Zheng;   Xiangwei Jiang;   Jun-Wei Luo;   Shu-Shen Li;   Lin-Wang Wang
2019
Source PublicationPhysical Review Applied
Volume11Pages:044058
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29414
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Yue-Yang Liu; Fan Zheng; Xiangwei Jiang; Jun-Wei Luo; Shu-Shen Li; Lin-Wang Wang. Ab Initio Investigation of Charge Trapping Across the Crystalline-Si–Amorphous-SiO 2 Interface[J]. Physical Review Applied,2019,11:044058.
APA Yue-Yang Liu; Fan Zheng; Xiangwei Jiang; Jun-Wei Luo; Shu-Shen Li; Lin-Wang Wang.(2019).Ab Initio Investigation of Charge Trapping Across the Crystalline-Si–Amorphous-SiO 2 Interface.Physical Review Applied,11,044058.
MLA Yue-Yang Liu; Fan Zheng; Xiangwei Jiang; Jun-Wei Luo; Shu-Shen Li; Lin-Wang Wang."Ab Initio Investigation of Charge Trapping Across the Crystalline-Si–Amorphous-SiO 2 Interface".Physical Review Applied 11(2019):044058.
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