Ab Initio Investigation of Charge Trapping Across the Crystalline-Si–Amorphous-SiO 2 Interface

	Ab Initio Investigation of Charge Trapping Across the Crystalline-Si–Amorphous-SiO 2 Interface
	Yue-Yang Liu; Fan Zheng; Xiangwei Jiang; Jun-Wei Luo; Shu-Shen Li; Lin-Wang Wang
	2019
Source Publication	Physical Review Applied
Volume	11 Pages:044058
Indexed By	SCI
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/29414
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	Yue-Yang Liu; Fan Zheng; Xiangwei Jiang; Jun-Wei Luo; Shu-Shen Li; Lin-Wang Wang. Ab Initio Investigation of Charge Trapping Across the Crystalline-Si–Amorphous-SiO 2 Interface[J]. Physical Review Applied,2019,11:044058.
APA	Yue-Yang Liu; Fan Zheng; Xiangwei Jiang; Jun-Wei Luo; Shu-Shen Li; Lin-Wang Wang.(2019).Ab Initio Investigation of Charge Trapping Across the Crystalline-Si–Amorphous-SiO 2 Interface.Physical Review Applied,11,044058.
MLA	Yue-Yang Liu; Fan Zheng; Xiangwei Jiang; Jun-Wei Luo; Shu-Shen Li; Lin-Wang Wang."Ab Initio Investigation of Charge Trapping Across the Crystalline-Si–Amorphous-SiO 2 Interface".Physical Review Applied 11(2019):044058.

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