Knowledge Management System Of Institute of Semiconductors,CAS
Ab Initio Investigation of Charge Trapping Across the Crystalline-Si–Amorphous-SiO 2 Interface | |
Yue-Yang Liu; Fan Zheng; Xiangwei Jiang; Jun-Wei Luo; Shu-Shen Li; Lin-Wang Wang | |
2019 | |
Source Publication | Physical Review Applied
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Volume | 11Pages:044058 |
Indexed By | SCI |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/29414 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | Yue-Yang Liu; Fan Zheng; Xiangwei Jiang; Jun-Wei Luo; Shu-Shen Li; Lin-Wang Wang. Ab Initio Investigation of Charge Trapping Across the Crystalline-Si–Amorphous-SiO 2 Interface[J]. Physical Review Applied,2019,11:044058. |
APA | Yue-Yang Liu; Fan Zheng; Xiangwei Jiang; Jun-Wei Luo; Shu-Shen Li; Lin-Wang Wang.(2019).Ab Initio Investigation of Charge Trapping Across the Crystalline-Si–Amorphous-SiO 2 Interface.Physical Review Applied,11,044058. |
MLA | Yue-Yang Liu; Fan Zheng; Xiangwei Jiang; Jun-Wei Luo; Shu-Shen Li; Lin-Wang Wang."Ab Initio Investigation of Charge Trapping Across the Crystalline-Si–Amorphous-SiO 2 Interface".Physical Review Applied 11(2019):044058. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
Ab Initio Investigat(3964KB) | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text |
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