Knowledge Management System Of Institute of Semiconductors,CAS
Defects coupling impacts on mono-layer WSe 2 tunneling field-effect transistors | |
Jixuan Wu ; Xiaolei Ma ; Jiezhi Chen ; Xiangwei Jiang | |
2019 | |
Source Publication | Applied Physics Express
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Volume | 12Pages:034001 |
Indexed By | SCI |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/29410 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | Jixuan Wu ; Xiaolei Ma ; Jiezhi Chen ; Xiangwei Jiang. Defects coupling impacts on mono-layer WSe 2 tunneling field-effect transistors[J]. Applied Physics Express,2019,12:034001. |
APA | Jixuan Wu ; Xiaolei Ma ; Jiezhi Chen ; Xiangwei Jiang.(2019).Defects coupling impacts on mono-layer WSe 2 tunneling field-effect transistors.Applied Physics Express,12,034001. |
MLA | Jixuan Wu ; Xiaolei Ma ; Jiezhi Chen ; Xiangwei Jiang."Defects coupling impacts on mono-layer WSe 2 tunneling field-effect transistors".Applied Physics Express 12(2019):034001. |
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File Name/Size | DocType | Version | Access | License | ||
Defects coupling imp(2147KB) | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text |
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