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Semipolar (1101) InGaN/GaN red–amber–yellow light- emitting diodes on triangular-striped Si (100) substrate
Qi Wang ;   Guodong Yuan ;   Wenqiang Liu ;   Shuai Zhao ;   Zhiqiang Liu ;   Yu Chen ;   Junxi Wang ;   Jinmin Li
2019
Source PublicationJournal of Materials Science
Volume54Issue:10Pages:7780-7788
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29406
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Qi Wang ; Guodong Yuan ; Wenqiang Liu ; Shuai Zhao ; Zhiqiang Liu ; Yu Chen ; Junxi Wang ; Jinmin Li. Semipolar (1101) InGaN/GaN red–amber–yellow light- emitting diodes on triangular-striped Si (100) substrate[J]. Journal of Materials Science,2019,54(10):7780-7788.
APA Qi Wang ; Guodong Yuan ; Wenqiang Liu ; Shuai Zhao ; Zhiqiang Liu ; Yu Chen ; Junxi Wang ; Jinmin Li.(2019).Semipolar (1101) InGaN/GaN red–amber–yellow light- emitting diodes on triangular-striped Si (100) substrate.Journal of Materials Science,54(10),7780-7788.
MLA Qi Wang ; Guodong Yuan ; Wenqiang Liu ; Shuai Zhao ; Zhiqiang Liu ; Yu Chen ; Junxi Wang ; Jinmin Li."Semipolar (1101) InGaN/GaN red–amber–yellow light- emitting diodes on triangular-striped Si (100) substrate".Journal of Materials Science 54.10(2019):7780-7788.
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