Semipolar (1101) InGaN/GaN red–amber–yellow light- emitting diodes on triangular-striped Si (100) substrate

	Semipolar (1101) InGaN/GaN red–amber–yellow light- emitting diodes on triangular-striped Si (100) substrate
	Qi Wang ; Guodong Yuan ; Wenqiang Liu ; Shuai Zhao ; Zhiqiang Liu ; Yu Chen ; Junxi Wang ; Jinmin Li
	2019
Source Publication	Journal of Materials Science
Volume	54 Issue:10 Pages:7780-7788
Indexed By	SCI
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/29406
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	Qi Wang ; Guodong Yuan ; Wenqiang Liu ; Shuai Zhao ; Zhiqiang Liu ; Yu Chen ; Junxi Wang ; Jinmin Li. Semipolar (1101) InGaN/GaN red–amber–yellow light- emitting diodes on triangular-striped Si (100) substrate[J]. Journal of Materials Science,2019,54(10):7780-7788.
APA	Qi Wang ; Guodong Yuan ; Wenqiang Liu ; Shuai Zhao ; Zhiqiang Liu ; Yu Chen ; Junxi Wang ; Jinmin Li.(2019).Semipolar (1101) InGaN/GaN red–amber–yellow light- emitting diodes on triangular-striped Si (100) substrate.Journal of Materials Science,54(10),7780-7788.
MLA	Qi Wang ; Guodong Yuan ; Wenqiang Liu ; Shuai Zhao ; Zhiqiang Liu ; Yu Chen ; Junxi Wang ; Jinmin Li."Semipolar (1101) InGaN/GaN red–amber–yellow light- emitting diodes on triangular-striped Si (100) substrate".Journal of Materials Science 54.10(2019):7780-7788.

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