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Semipolar (1101) InGaN/GaN red–amber–yellow light- emitting diodes on triangular-striped Si (100) substrate | |
Qi Wang ; Guodong Yuan ; Wenqiang Liu ; Shuai Zhao ; Zhiqiang Liu ; Yu Chen ; Junxi Wang ; Jinmin Li | |
2019 | |
Source Publication | Journal of Materials Science
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Volume | 54Issue:10Pages:7780-7788 |
Indexed By | SCI |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/29406 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | Qi Wang ; Guodong Yuan ; Wenqiang Liu ; Shuai Zhao ; Zhiqiang Liu ; Yu Chen ; Junxi Wang ; Jinmin Li. Semipolar (1101) InGaN/GaN red–amber–yellow light- emitting diodes on triangular-striped Si (100) substrate[J]. Journal of Materials Science,2019,54(10):7780-7788. |
APA | Qi Wang ; Guodong Yuan ; Wenqiang Liu ; Shuai Zhao ; Zhiqiang Liu ; Yu Chen ; Junxi Wang ; Jinmin Li.(2019).Semipolar (1101) InGaN/GaN red–amber–yellow light- emitting diodes on triangular-striped Si (100) substrate.Journal of Materials Science,54(10),7780-7788. |
MLA | Qi Wang ; Guodong Yuan ; Wenqiang Liu ; Shuai Zhao ; Zhiqiang Liu ; Yu Chen ; Junxi Wang ; Jinmin Li."Semipolar (1101) InGaN/GaN red–amber–yellow light- emitting diodes on triangular-striped Si (100) substrate".Journal of Materials Science 54.10(2019):7780-7788. |
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File Name/Size | DocType | Version | Access | License | ||
Semipolar ( 11¯01 )(1412KB) | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text |
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