High performance tin diselenide photodetectors dependent on thickness: a vertical graphene sandwiched device and interfacial mechanism

	High performance tin diselenide photodetectors dependent on thickness: a vertical graphene sandwiched device and interfacial mechanism
	Wei Gao; Zhaoqiang Zheng; Yongtao Li; Yu Zhao; Liang Xu; Huixiong Deng; Jingbo Li
	2019
Source Publication	Nanoscale
Volume	11 Issue:28 Pages:13309-13317
Indexed By	SCI
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/29404
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	Wei Gao; Zhaoqiang Zheng; Yongtao Li; Yu Zhao; Liang Xu; Huixiong Deng; Jingbo Li. High performance tin diselenide photodetectors dependent on thickness: a vertical graphene sandwiched device and interfacial mechanism[J]. Nanoscale,2019,11(28):13309-13317.
APA	Wei Gao; Zhaoqiang Zheng; Yongtao Li; Yu Zhao; Liang Xu; Huixiong Deng; Jingbo Li.(2019).High performance tin diselenide photodetectors dependent on thickness: a vertical graphene sandwiched device and interfacial mechanism.Nanoscale,11(28),13309-13317.
MLA	Wei Gao; Zhaoqiang Zheng; Yongtao Li; Yu Zhao; Liang Xu; Huixiong Deng; Jingbo Li."High performance tin diselenide photodetectors dependent on thickness: a vertical graphene sandwiched device and interfacial mechanism".Nanoscale 11.28(2019):13309-13317.

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