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High performance tin diselenide photodetectors dependent on thickness: a vertical graphene sandwiched device and interfacial mechanism
Wei Gao;   Zhaoqiang Zheng;   Yongtao Li;   Yu Zhao;   Liang Xu;   Huixiong Deng;   Jingbo Li
2019
Source PublicationNanoscale
Volume11Issue:28Pages:13309-13317
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29404
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Wei Gao; Zhaoqiang Zheng; Yongtao Li; Yu Zhao; Liang Xu; Huixiong Deng; Jingbo Li. High performance tin diselenide photodetectors dependent on thickness: a vertical graphene sandwiched device and interfacial mechanism[J]. Nanoscale,2019,11(28):13309-13317.
APA Wei Gao; Zhaoqiang Zheng; Yongtao Li; Yu Zhao; Liang Xu; Huixiong Deng; Jingbo Li.(2019).High performance tin diselenide photodetectors dependent on thickness: a vertical graphene sandwiched device and interfacial mechanism.Nanoscale,11(28),13309-13317.
MLA Wei Gao; Zhaoqiang Zheng; Yongtao Li; Yu Zhao; Liang Xu; Huixiong Deng; Jingbo Li."High performance tin diselenide photodetectors dependent on thickness: a vertical graphene sandwiched device and interfacial mechanism".Nanoscale 11.28(2019):13309-13317.
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