Knowledge Management System Of Institute of Semiconductors,CAS
High performance tin diselenide photodetectors dependent on thickness: a vertical graphene sandwiched device and interfacial mechanism | |
Wei Gao; Zhaoqiang Zheng; Yongtao Li; Yu Zhao; Liang Xu; Huixiong Deng; Jingbo Li | |
2019 | |
Source Publication | Nanoscale
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Volume | 11Issue:28Pages:13309-13317 |
Indexed By | SCI |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/29404 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | Wei Gao; Zhaoqiang Zheng; Yongtao Li; Yu Zhao; Liang Xu; Huixiong Deng; Jingbo Li. High performance tin diselenide photodetectors dependent on thickness: a vertical graphene sandwiched device and interfacial mechanism[J]. Nanoscale,2019,11(28):13309-13317. |
APA | Wei Gao; Zhaoqiang Zheng; Yongtao Li; Yu Zhao; Liang Xu; Huixiong Deng; Jingbo Li.(2019).High performance tin diselenide photodetectors dependent on thickness: a vertical graphene sandwiched device and interfacial mechanism.Nanoscale,11(28),13309-13317. |
MLA | Wei Gao; Zhaoqiang Zheng; Yongtao Li; Yu Zhao; Liang Xu; Huixiong Deng; Jingbo Li."High performance tin diselenide photodetectors dependent on thickness: a vertical graphene sandwiched device and interfacial mechanism".Nanoscale 11.28(2019):13309-13317. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
High performance tin(1907KB) | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text |
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