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Monolithic semi-polar (1101) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate
Qi Wang ;   Guo-Dong Yuan ;   Wen-Qiang Liu ;   Shuai Zhao ;   Lu Zhang ;   Zhi-Qiang Liu ;   Jun-Xi Wang ;   Jin-Min Li
2019
Source PublicationChinese Physics B
Volume28Issue:8Pages:087802
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29402
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Qi Wang ; Guo-Dong Yuan ; Wen-Qiang Liu ; Shuai Zhao ; Lu Zhang ; Zhi-Qiang Liu ; Jun-Xi Wang ; Jin-Min Li. Monolithic semi-polar (1101) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate[J]. Chinese Physics B,2019,28(8):087802.
APA Qi Wang ; Guo-Dong Yuan ; Wen-Qiang Liu ; Shuai Zhao ; Lu Zhang ; Zhi-Qiang Liu ; Jun-Xi Wang ; Jin-Min Li.(2019).Monolithic semi-polar (1101) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate.Chinese Physics B,28(8),087802.
MLA Qi Wang ; Guo-Dong Yuan ; Wen-Qiang Liu ; Shuai Zhao ; Lu Zhang ; Zhi-Qiang Liu ; Jun-Xi Wang ; Jin-Min Li."Monolithic semi-polar (1101) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate".Chinese Physics B 28.8(2019):087802.
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