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Metal-assisted photochemical etching of GaN nanowires: The role of metal distribution | |
Qi Wang; Guodong Yuan ; Shuai Zhao; Wenqiang Liu; Zhiqiang Liu; Junxi Wang; Jinmin Li | |
2019 | |
Source Publication | Electrochemistry Communications
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Volume | 103Pages:66-71 |
Indexed By | SCI |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/29397 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | Qi Wang; Guodong Yuan ; Shuai Zhao; Wenqiang Liu; Zhiqiang Liu; Junxi Wang; Jinmin Li. Metal-assisted photochemical etching of GaN nanowires: The role of metal distribution[J]. Electrochemistry Communications,2019,103:66-71. |
APA | Qi Wang; Guodong Yuan ; Shuai Zhao; Wenqiang Liu; Zhiqiang Liu; Junxi Wang; Jinmin Li.(2019).Metal-assisted photochemical etching of GaN nanowires: The role of metal distribution.Electrochemistry Communications,103,66-71. |
MLA | Qi Wang; Guodong Yuan ; Shuai Zhao; Wenqiang Liu; Zhiqiang Liu; Junxi Wang; Jinmin Li."Metal-assisted photochemical etching of GaN nanowires: The role of metal distribution".Electrochemistry Communications 103(2019):66-71. |
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File Name/Size | DocType | Version | Access | License | ||
Metal-assisted photo(1641KB) | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text |
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