Metal-assisted photochemical etching of GaN nanowires: The role of metal distribution

	Metal-assisted photochemical etching of GaN nanowires: The role of metal distribution
	Qi Wang; Guodong Yuan ; Shuai Zhao; Wenqiang Liu; Zhiqiang Liu; Junxi Wang; Jinmin Li
	2019
Source Publication	Electrochemistry Communications
Volume	103 Pages:66-71
Indexed By	SCI
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/29397
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	Qi Wang; Guodong Yuan ; Shuai Zhao; Wenqiang Liu; Zhiqiang Liu; Junxi Wang; Jinmin Li. Metal-assisted photochemical etching of GaN nanowires: The role of metal distribution[J]. Electrochemistry Communications,2019,103:66-71.
APA	Qi Wang; Guodong Yuan ; Shuai Zhao; Wenqiang Liu; Zhiqiang Liu; Junxi Wang; Jinmin Li.(2019).Metal-assisted photochemical etching of GaN nanowires: The role of metal distribution.Electrochemistry Communications,103,66-71.
MLA	Qi Wang; Guodong Yuan ; Shuai Zhao; Wenqiang Liu; Zhiqiang Liu; Junxi Wang; Jinmin Li."Metal-assisted photochemical etching of GaN nanowires: The role of metal distribution".Electrochemistry Communications 103(2019):66-71.

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