Knowledge Management System Of Institute of Semiconductors,CAS
Interfacial Landau levels in bent graphene racetracks | |
Zhao Liu; Dong-Bo Zhang; Gotthard Seifert; Ying Liu; Kai Chang | |
2019 | |
Source Publication | PHYSICAL REVIEW B
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Volume | 99Issue:16Pages:165416 |
Indexed By | SCI |
Language | 英语 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/29393 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | Zhao Liu; Dong-Bo Zhang; Gotthard Seifert; Ying Liu; Kai Chang. Interfacial Landau levels in bent graphene racetracks[J]. PHYSICAL REVIEW B,2019,99(16):165416. |
APA | Zhao Liu; Dong-Bo Zhang; Gotthard Seifert; Ying Liu; Kai Chang.(2019).Interfacial Landau levels in bent graphene racetracks.PHYSICAL REVIEW B,99(16),165416. |
MLA | Zhao Liu; Dong-Bo Zhang; Gotthard Seifert; Ying Liu; Kai Chang."Interfacial Landau levels in bent graphene racetracks".PHYSICAL REVIEW B 99.16(2019):165416. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
Interfacial Landau l(1505KB) | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text |
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