SEMI OpenIR  > 半导体超晶格国家重点实验室
Interfacial Landau levels in bent graphene racetracks
Zhao Liu;   Dong-Bo Zhang;   Gotthard Seifert;   Ying Liu;   Kai Chang
2019
Source PublicationPHYSICAL REVIEW B
Volume99Issue:16Pages:165416
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29393
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Zhao Liu; Dong-Bo Zhang; Gotthard Seifert; Ying Liu; Kai Chang. Interfacial Landau levels in bent graphene racetracks[J]. PHYSICAL REVIEW B,2019,99(16):165416.
APA Zhao Liu; Dong-Bo Zhang; Gotthard Seifert; Ying Liu; Kai Chang.(2019).Interfacial Landau levels in bent graphene racetracks.PHYSICAL REVIEW B,99(16),165416.
MLA Zhao Liu; Dong-Bo Zhang; Gotthard Seifert; Ying Liu; Kai Chang."Interfacial Landau levels in bent graphene racetracks".PHYSICAL REVIEW B 99.16(2019):165416.
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