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Electrically tuning many-body states in a Coulomb-coupled InAs/InGaSb double layer
Xing-Jun Wu;   Wenkai Lou;   Kai Chang;   Gerard Sullivan;   Amal Ikhlassi;   Rui-Rui Du
2019
Source PublicationPHYSICAL REVIEW B
Volume100Pages:165309
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29384
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Xing-Jun Wu; Wenkai Lou; Kai Chang; Gerard Sullivan; Amal Ikhlassi; Rui-Rui Du. Electrically tuning many-body states in a Coulomb-coupled InAs/InGaSb double layer[J]. PHYSICAL REVIEW B,2019,100:165309.
APA Xing-Jun Wu; Wenkai Lou; Kai Chang; Gerard Sullivan; Amal Ikhlassi; Rui-Rui Du.(2019).Electrically tuning many-body states in a Coulomb-coupled InAs/InGaSb double layer.PHYSICAL REVIEW B,100,165309.
MLA Xing-Jun Wu; Wenkai Lou; Kai Chang; Gerard Sullivan; Amal Ikhlassi; Rui-Rui Du."Electrically tuning many-body states in a Coulomb-coupled InAs/InGaSb double layer".PHYSICAL REVIEW B 100(2019):165309.
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