| Multicolored-light emission from InGaN/GaN multiple quantum wells grown by selective-area epitaxy on patterned Si(100) substrates | |
| Qi Wang ; Guodong Yuan ; Tongbo Wei ; Zhiqiang Liu ; Wenqiang Liu ; Lu Zhang ; Xuecheng Wei ; Junxi Wang ; Jinmin Li | |
| 2018 | |
| Source Publication | JOURNAL OF MATERIALS SCIENCE
 |
| Volume | 53Issue:24Pages:16439-16446 |
| Indexed By | SCI |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/29369 |
| Collection | 中科院半导体照明研发中心 |
| Recommended Citation GB/T 7714 | Qi Wang ; Guodong Yuan ; Tongbo Wei ; Zhiqiang Liu ; Wenqiang Liu ; Lu Zhang ; Xuecheng Wei ; Junxi Wang ; Jinmin Li. Multicolored-light emission from InGaN/GaN multiple quantum wells grown by selective-area epitaxy on patterned Si(100) substrates[J]. JOURNAL OF MATERIALS SCIENCE,2018,53(24):16439-16446. |
| APA | Qi Wang ; Guodong Yuan ; Tongbo Wei ; Zhiqiang Liu ; Wenqiang Liu ; Lu Zhang ; Xuecheng Wei ; Junxi Wang ; Jinmin Li.(2018).Multicolored-light emission from InGaN/GaN multiple quantum wells grown by selective-area epitaxy on patterned Si(100) substrates.JOURNAL OF MATERIALS SCIENCE,53(24),16439-16446. |
| MLA | Qi Wang ; Guodong Yuan ; Tongbo Wei ; Zhiqiang Liu ; Wenqiang Liu ; Lu Zhang ; Xuecheng Wei ; Junxi Wang ; Jinmin Li."Multicolored-light emission from InGaN/GaN multiple quantum wells grown by selective-area epitaxy on patterned Si(100) substrates".JOURNAL OF MATERIALS SCIENCE 53.24(2018):16439-16446. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 王琦Multicolored-light（1908KB） | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text | |
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment