In Operando Micro-Raman Three-Dimensional Thermometry with Diffraction-Limit Spatial Resolution for GaN-based Light-Emitting Diodes

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	In Operando Micro-Raman Three-Dimensional Thermometry with Diffraction-Limit Spatial Resolution for GaN-based Light-Emitting Diodes
	T. Park; Yong-Jing Guan; Zhi-Qiang Liu; Yong Zhang
	2018
Source Publication	PHYSICAL REVIEW APPLIED
Volume	10 Issue:3 Pages:034049
Indexed By	SCI
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/29368
Collection	光电子研究发展中心
Recommended Citation GB/T 7714	T. Park; Yong-Jing Guan; Zhi-Qiang Liu; Yong Zhang. In Operando Micro-Raman Three-Dimensional Thermometry with Diffraction-Limit Spatial Resolution for GaN-based Light-Emitting Diodes[J]. PHYSICAL REVIEW APPLIED,2018,10(3):034049.
APA	T. Park; Yong-Jing Guan; Zhi-Qiang Liu; Yong Zhang.(2018).In Operando Micro-Raman Three-Dimensional Thermometry with Diffraction-Limit Spatial Resolution for GaN-based Light-Emitting Diodes.PHYSICAL REVIEW APPLIED,10(3),034049.
MLA	T. Park; Yong-Jing Guan; Zhi-Qiang Liu; Yong Zhang."In Operando Micro-Raman Three-Dimensional Thermometry with Diffraction-Limit Spatial Resolution for GaN-based Light-Emitting Diodes".PHYSICAL REVIEW APPLIED 10.3(2018):034049.

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