| Impurity resonant state p-doping layer for high-efficiency nitride-based light-emitting diodes | |
| Zhiqiang Liu; Xiaoyan Yi ; Liancheng Wang ; Tongbo Wei ; Guodong Yuan ; Jianchang Yan ; Junxi Wang ; Jinmin Li ; Yi Shi; Yong Zhang | |
| 2018 | |
| Source Publication | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
 |
| Volume | 33Issue:11Pages:114004 |
| Indexed By | SCI |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/29367 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | Zhiqiang Liu; Xiaoyan Yi ; Liancheng Wang ; Tongbo Wei ; Guodong Yuan ; Jianchang Yan ; Junxi Wang ; Jinmin Li ; Yi Shi; Yong Zhang. Impurity resonant state p-doping layer for high-efficiency nitride-based light-emitting diodes[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2018,33(11):114004. |
| APA | Zhiqiang Liu; Xiaoyan Yi ; Liancheng Wang ; Tongbo Wei ; Guodong Yuan ; Jianchang Yan ; Junxi Wang ; Jinmin Li ; Yi Shi; Yong Zhang.(2018).Impurity resonant state p-doping layer for high-efficiency nitride-based light-emitting diodes.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,33(11),114004. |
| MLA | Zhiqiang Liu; Xiaoyan Yi ; Liancheng Wang ; Tongbo Wei ; Guodong Yuan ; Jianchang Yan ; Junxi Wang ; Jinmin Li ; Yi Shi; Yong Zhang."Impurity resonant state p-doping layer for high-efficiency nitride-based light-emitting diodes".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 33.11(2018):114004. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 刘志强Impurity resonant（1018KB） | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text | |
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