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Significantly reduced in-plane tensile stress of GaN films grown on SiC substrates by using graded AlGaN buffer and SiN x interlayer
Gaoqiang Deng ;   Yuantao Zhang ;   Ye Yu ;   Zhen Huang ;   Xu Han ;   Liang Chen ;   Long Yan ;   Pengchong Li ;   Xin Dong ;   Degang Zhao ;   Guotong Du
2018
Source PublicationSUPERLATTICES AND MICROSTRUCTURES
Volume122Pages:74-79
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29362
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Gaoqiang Deng ; Yuantao Zhang ; Ye Yu ; Zhen Huang ; Xu Han ; Liang Chen ; Long Yan ; Pengchong Li ; Xin Dong ; Degang Zhao ; Guotong Du. Significantly reduced in-plane tensile stress of GaN films grown on SiC substrates by using graded AlGaN buffer and SiN x interlayer[J]. SUPERLATTICES AND MICROSTRUCTURES,2018,122:74-79.
APA Gaoqiang Deng ; Yuantao Zhang ; Ye Yu ; Zhen Huang ; Xu Han ; Liang Chen ; Long Yan ; Pengchong Li ; Xin Dong ; Degang Zhao ; Guotong Du.(2018).Significantly reduced in-plane tensile stress of GaN films grown on SiC substrates by using graded AlGaN buffer and SiN x interlayer.SUPERLATTICES AND MICROSTRUCTURES,122,74-79.
MLA Gaoqiang Deng ; Yuantao Zhang ; Ye Yu ; Zhen Huang ; Xu Han ; Liang Chen ; Long Yan ; Pengchong Li ; Xin Dong ; Degang Zhao ; Guotong Du."Significantly reduced in-plane tensile stress of GaN films grown on SiC substrates by using graded AlGaN buffer and SiN x interlayer".SUPERLATTICES AND MICROSTRUCTURES 122(2018):74-79.
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