Significantly reduced in-plane tensile stress of GaN films grown on SiC substrates by using graded AlGaN buffer and SiN x interlayer | |
Gaoqiang Deng ; Yuantao Zhang ; Ye Yu ; Zhen Huang ; Xu Han ; Liang Chen ; Long Yan ; Pengchong Li ; Xin Dong ; Degang Zhao ; Guotong Du | |
2018 | |
Source Publication | SUPERLATTICES AND MICROSTRUCTURES
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Volume | 122Pages:74-79 |
Indexed By | SCI |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/29362 |
Collection | 光电子研究发展中心 |
Recommended Citation GB/T 7714 | Gaoqiang Deng ; Yuantao Zhang ; Ye Yu ; Zhen Huang ; Xu Han ; Liang Chen ; Long Yan ; Pengchong Li ; Xin Dong ; Degang Zhao ; Guotong Du. Significantly reduced in-plane tensile stress of GaN films grown on SiC substrates by using graded AlGaN buffer and SiN x interlayer[J]. SUPERLATTICES AND MICROSTRUCTURES,2018,122:74-79. |
APA | Gaoqiang Deng ; Yuantao Zhang ; Ye Yu ; Zhen Huang ; Xu Han ; Liang Chen ; Long Yan ; Pengchong Li ; Xin Dong ; Degang Zhao ; Guotong Du.(2018).Significantly reduced in-plane tensile stress of GaN films grown on SiC substrates by using graded AlGaN buffer and SiN x interlayer.SUPERLATTICES AND MICROSTRUCTURES,122,74-79. |
MLA | Gaoqiang Deng ; Yuantao Zhang ; Ye Yu ; Zhen Huang ; Xu Han ; Liang Chen ; Long Yan ; Pengchong Li ; Xin Dong ; Degang Zhao ; Guotong Du."Significantly reduced in-plane tensile stress of GaN films grown on SiC substrates by using graded AlGaN buffer and SiN x interlayer".SUPERLATTICES AND MICROSTRUCTURES 122(2018):74-79. |
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赵德刚 2018 SM Signific(1151KB) | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text |
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