| Simulation and fabrication of N-polar GaN-based blue-green light- emitting diodes with p-type AlGaN electron blocking layer | |
| Gaoqiang Deng; Yuantao Zhang; Ye Yu; Long Yan; Pengchong Li; Xu Han; Liang Chen; Degang Zhao; Guotong Du | |
| 2018 | |
| Source Publication | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
 |
| Volume | 29Issue:11Pages:9321-9325 |
| Indexed By | SCI |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/29361 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | Gaoqiang Deng;Yuantao Zhang;Ye Yu;Long Yan;Pengchong Li;Xu Han;Liang Chen;Degang Zhao;Guotong Du. Simulation and fabrication of N-polar GaN-based blue-green light- emitting diodes with p-type AlGaN electron blocking layer[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2018,29(11):9321-9325. |
| APA | Gaoqiang Deng;Yuantao Zhang;Ye Yu;Long Yan;Pengchong Li;Xu Han;Liang Chen;Degang Zhao;Guotong Du.(2018).Simulation and fabrication of N-polar GaN-based blue-green light- emitting diodes with p-type AlGaN electron blocking layer.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,29(11),9321-9325. |
| MLA | Gaoqiang Deng;Yuantao Zhang;Ye Yu;Long Yan;Pengchong Li;Xu Han;Liang Chen;Degang Zhao;Guotong Du."Simulation and fabrication of N-polar GaN-based blue-green light- emitting diodes with p-type AlGaN electron blocking layer".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 29.11(2018):9321-9325. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 赵德刚 2018 JMS Simulat（1980KB） | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text | |
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