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Simulation and fabrication of N-polar GaN-based blue-green light- emitting diodes with p-type AlGaN electron blocking layer
Gaoqiang Deng;  Yuantao Zhang;  Ye Yu;  Long Yan;  Pengchong Li;  Xu Han;  Liang Chen;  Degang Zhao;  Guotong Du
2018
Source PublicationJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume29Issue:11Pages:9321-9325
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29361
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Gaoqiang Deng;Yuantao Zhang;Ye Yu;Long Yan;Pengchong Li;Xu Han;Liang Chen;Degang Zhao;Guotong Du. Simulation and fabrication of N-polar GaN-based blue-green light- emitting diodes with p-type AlGaN electron blocking layer[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2018,29(11):9321-9325.
APA Gaoqiang Deng;Yuantao Zhang;Ye Yu;Long Yan;Pengchong Li;Xu Han;Liang Chen;Degang Zhao;Guotong Du.(2018).Simulation and fabrication of N-polar GaN-based blue-green light- emitting diodes with p-type AlGaN electron blocking layer.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,29(11),9321-9325.
MLA Gaoqiang Deng;Yuantao Zhang;Ye Yu;Long Yan;Pengchong Li;Xu Han;Liang Chen;Degang Zhao;Guotong Du."Simulation and fabrication of N-polar GaN-based blue-green light- emitting diodes with p-type AlGaN electron blocking layer".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 29.11(2018):9321-9325.
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赵德刚 2018 JMS Simulat(1980KB)期刊论文作者接受稿限制开放CC BY-NC-SAApplication Full Text
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