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Growth of AlGaN-based multiple quantum wells on SiC substrates
Xu Han;   Yuantao Zhang;   Pengchong Li ;   Long Yan ;   Gaoqiang Deng ;   Liang Chen ;   Ye Yu ;   Degang Zhao ;   Jingzhi Yin
2018
Source PublicationJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume29Issue:9Pages:7756-7762
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29360
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Xu Han; Yuantao Zhang; Pengchong Li ; Long Yan ; Gaoqiang Deng ; Liang Chen ; Ye Yu ; Degang Zhao ; Jingzhi Yin. Growth of AlGaN-based multiple quantum wells on SiC substrates[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2018,29(9):7756-7762.
APA Xu Han; Yuantao Zhang; Pengchong Li ; Long Yan ; Gaoqiang Deng ; Liang Chen ; Ye Yu ; Degang Zhao ; Jingzhi Yin.(2018).Growth of AlGaN-based multiple quantum wells on SiC substrates.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,29(9),7756-7762.
MLA Xu Han; Yuantao Zhang; Pengchong Li ; Long Yan ; Gaoqiang Deng ; Liang Chen ; Ye Yu ; Degang Zhao ; Jingzhi Yin."Growth of AlGaN-based multiple quantum wells on SiC substrates".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 29.9(2018):7756-7762.
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赵德刚 2018 JMS Growth (2869KB)期刊论文作者接受稿限制开放CC BY-NC-SAApplication Full Text
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