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Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio
Gaoqiang Deng;   Yuantao Zhang;   Ye Yu;   Long Yan;   Pengchong Li;   Xu Han;   Liang Chen;   Degang Zhao;   Guotong Du
2018
Source PublicationAPPLIED PHYSICS LETTERS
Volume112Issue:15Pages:151607
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29337
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Gaoqiang Deng; Yuantao Zhang; Ye Yu; Long Yan; Pengchong Li; Xu Han; Liang Chen; Degang Zhao; Guotong Du. Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio[J]. APPLIED PHYSICS LETTERS,2018,112(15):151607.
APA Gaoqiang Deng; Yuantao Zhang; Ye Yu; Long Yan; Pengchong Li; Xu Han; Liang Chen; Degang Zhao; Guotong Du.(2018).Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio.APPLIED PHYSICS LETTERS,112(15),151607.
MLA Gaoqiang Deng; Yuantao Zhang; Ye Yu; Long Yan; Pengchong Li; Xu Han; Liang Chen; Degang Zhao; Guotong Du."Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio".APPLIED PHYSICS LETTERS 112.15(2018):151607.
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