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Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms
J. Yang ;   S.T. Liu ;   X.W. Wang ;   D.G. Zhao ;   D.S. Jiang ;   P. Chen ;   J.J. Zhu ;   Z.S. Liu ;   F. Liang ;   W. Liu ;   L.Q. Zhang ;   H. Yang ;   W.J. Wang ;   M. Li
2018
Source PublicationSUPERLATTICES AND MICROSTRUCTURES
Volume113Pages:34-40
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29336
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
J. Yang ; S.T. Liu ; X.W. Wang ; D.G. Zhao ; D.S. Jiang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; F. Liang ; W. Liu ; L.Q. Zhang ; H. Yang ; W.J. Wang ; M. Li. Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms[J]. SUPERLATTICES AND MICROSTRUCTURES,2018,113:34-40.
APA J. Yang ; S.T. Liu ; X.W. Wang ; D.G. Zhao ; D.S. Jiang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; F. Liang ; W. Liu ; L.Q. Zhang ; H. Yang ; W.J. Wang ; M. Li.(2018).Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms.SUPERLATTICES AND MICROSTRUCTURES,113,34-40.
MLA J. Yang ; S.T. Liu ; X.W. Wang ; D.G. Zhao ; D.S. Jiang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; F. Liang ; W. Liu ; L.Q. Zhang ; H. Yang ; W.J. Wang ; M. Li."Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms".SUPERLATTICES AND MICROSTRUCTURES 113(2018):34-40.
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杨静 2018 SM Enhanceme(1681KB)期刊论文作者接受稿限制开放CC BY-NC-SAApplication Full Text
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