| Suppression the Leakage of Optical Field and Carriers in GaN-Based Laser Diodes by Using InGaN Barrier Layers | |
| Jing Yang; Degang Zhao; Zongshum Liu; De-Sheng Jiang; Jianjun Zhu; Ping Chen; Feng Liang; S. T. Liu; Wei Liu; Yao Xing; Mo Li | |
| 2018 | |
| Source Publication | IEEE Photonics Journal
 |
| Volume | 10Issue:4Pages:1503107 |
| Indexed By | SCI |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/29334 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | Jing Yang;Degang Zhao;Zongshum Liu;De-Sheng Jiang;Jianjun Zhu;Ping Chen;Feng Liang;S. T. Liu;Wei Liu;Yao Xing;Mo Li. Suppression the Leakage of Optical Field and Carriers in GaN-Based Laser Diodes by Using InGaN Barrier Layers[J]. IEEE Photonics Journal,2018,10(4):1503107. |
| APA | Jing Yang;Degang Zhao;Zongshum Liu;De-Sheng Jiang;Jianjun Zhu;Ping Chen;Feng Liang;S. T. Liu;Wei Liu;Yao Xing;Mo Li.(2018).Suppression the Leakage of Optical Field and Carriers in GaN-Based Laser Diodes by Using InGaN Barrier Layers.IEEE Photonics Journal,10(4),1503107. |
| MLA | Jing Yang;Degang Zhao;Zongshum Liu;De-Sheng Jiang;Jianjun Zhu;Ping Chen;Feng Liang;S. T. Liu;Wei Liu;Yao Xing;Mo Li."Suppression the Leakage of Optical Field and Carriers in GaN-Based Laser Diodes by Using InGaN Barrier Layers".IEEE Photonics Journal 10.4(2018):1503107. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 杨静 2018 IEEE_PJ_Supp（2127KB） | 期刊论文 | 作者接受稿 | 限制开放 | CC BY-NC-SA | Application Full Text | |
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