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Suppression the Leakage of Optical Field and Carriers in GaN-Based Laser Diodes by Using InGaN Barrier Layers
Jing Yang;  Degang Zhao;  Zongshum Liu;  De-Sheng Jiang;  Jianjun Zhu;  Ping Chen;  Feng Liang;  S. T. Liu;  Wei Liu;  Yao Xing;  Mo Li
2018
Source PublicationIEEE Photonics Journal
Volume10Issue:4Pages:1503107
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29334
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Jing Yang;Degang Zhao;Zongshum Liu;De-Sheng Jiang;Jianjun Zhu;Ping Chen;Feng Liang;S. T. Liu;Wei Liu;Yao Xing;Mo Li. Suppression the Leakage of Optical Field and Carriers in GaN-Based Laser Diodes by Using InGaN Barrier Layers[J]. IEEE Photonics Journal,2018,10(4):1503107.
APA Jing Yang;Degang Zhao;Zongshum Liu;De-Sheng Jiang;Jianjun Zhu;Ping Chen;Feng Liang;S. T. Liu;Wei Liu;Yao Xing;Mo Li.(2018).Suppression the Leakage of Optical Field and Carriers in GaN-Based Laser Diodes by Using InGaN Barrier Layers.IEEE Photonics Journal,10(4),1503107.
MLA Jing Yang;Degang Zhao;Zongshum Liu;De-Sheng Jiang;Jianjun Zhu;Ping Chen;Feng Liang;S. T. Liu;Wei Liu;Yao Xing;Mo Li."Suppression the Leakage of Optical Field and Carriers in GaN-Based Laser Diodes by Using InGaN Barrier Layers".IEEE Photonics Journal 10.4(2018):1503107.
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