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The influence of well thickness on the photoluminescence properties of blue-violet light emitting InGaN/GaN multiple quantum wells
Jialin Huang ;   Wei Liu ;   Linkai Yi ;   Mei Zhou ;   Degang Zhao ;   Desheng Jiang
2018
Source PublicationSUPERLATTICES AND MICROSTRUCTURES
Volume113Pages:534-540
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29330
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Jialin Huang ; Wei Liu ; Linkai Yi ; Mei Zhou ; Degang Zhao ; Desheng Jiang. The influence of well thickness on the photoluminescence properties of blue-violet light emitting InGaN/GaN multiple quantum wells[J]. SUPERLATTICES AND MICROSTRUCTURES,2018,113:534-540.
APA Jialin Huang ; Wei Liu ; Linkai Yi ; Mei Zhou ; Degang Zhao ; Desheng Jiang.(2018).The influence of well thickness on the photoluminescence properties of blue-violet light emitting InGaN/GaN multiple quantum wells.SUPERLATTICES AND MICROSTRUCTURES,113,534-540.
MLA Jialin Huang ; Wei Liu ; Linkai Yi ; Mei Zhou ; Degang Zhao ; Desheng Jiang."The influence of well thickness on the photoluminescence properties of blue-violet light emitting InGaN/GaN multiple quantum wells".SUPERLATTICES AND MICROSTRUCTURES 113(2018):534-540.
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刘炜 黄佳琳 2018 SM The i(986KB)期刊论文作者接受稿限制开放CC BY-NC-SAApplication Full Text
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