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The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells
S.T. Liu ;   J. Yang ;   D.G. Zhao ;   D.S. Jiang ;   F. Liang ;   P. Chen ;   J.J. Zhu ;   Z.S. Liu ;   W. Liu ;   Y. Xing ;   L.Y. Peng ;   L.Q. Zhang ;   W.J. Wang ;   M. Li ;   Y.T. Zhang ;   G.T. Du
2018
Source PublicationOptical Materials
Volume86Pages:460-463
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29325
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
S.T. Liu ; J. Yang ; D.G. Zhao ; D.S. Jiang ; F. Liang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; W. Liu ; Y. Xing ; L.Y. Peng ; L.Q. Zhang ; W.J. Wang ; M. Li ; Y.T. Zhang ; G.T. Du. The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells[J]. Optical Materials,2018,86:460-463.
APA S.T. Liu ; J. Yang ; D.G. Zhao ; D.S. Jiang ; F. Liang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; W. Liu ; Y. Xing ; L.Y. Peng ; L.Q. Zhang ; W.J. Wang ; M. Li ; Y.T. Zhang ; G.T. Du.(2018).The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells.Optical Materials,86,460-463.
MLA S.T. Liu ; J. Yang ; D.G. Zhao ; D.S. Jiang ; F. Liang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; W. Liu ; Y. Xing ; L.Y. Peng ; L.Q. Zhang ; W.J. Wang ; M. Li ; Y.T. Zhang ; G.T. Du."The influence of thermal annealing process after GaN cap layer growth on structural and optical properties of InGaN/InGaN multi-quantum wells".Optical Materials 86(2018):460-463.
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刘双韬 2018 OM The infl(1110KB)期刊论文作者接受稿限制开放CC BY-NC-SAApplication Full Text
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