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Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN
Feng Liang;  Degang Zhao;  Desheng Jiang;  Zongshun Liu;  Jianjun Zhu;  Ping Chen;  Jing Yang;  Shuangtao Liu;  Yao Xing;  Liqun Zhang
2018
Source PublicationNanomaterials (Basel, Switzerland)
Volume8Issue:12Pages:1026
Indexed BySCI
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/29323
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Feng Liang;Degang Zhao;Desheng Jiang;Zongshun Liu;Jianjun Zhu;Ping Chen;Jing Yang;Shuangtao Liu;Yao Xing;Liqun Zhang. Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN[J]. Nanomaterials (Basel, Switzerland),2018,8(12):1026.
APA Feng Liang;Degang Zhao;Desheng Jiang;Zongshun Liu;Jianjun Zhu;Ping Chen;Jing Yang;Shuangtao Liu;Yao Xing;Liqun Zhang.(2018).Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN.Nanomaterials (Basel, Switzerland),8(12),1026.
MLA Feng Liang;Degang Zhao;Desheng Jiang;Zongshun Liu;Jianjun Zhu;Ping Chen;Jing Yang;Shuangtao Liu;Yao Xing;Liqun Zhang."Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN".Nanomaterials (Basel, Switzerland) 8.12(2018):1026.
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梁锋 2018 nanomaterial(1697KB)期刊论文作者接受稿限制开放CC BY-NC-SAApplication Full Text
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